Acceptable contamination levels in solar grade silicon: From feedstock to solar cell
Introduction
The requirements on the silicon quality for photovoltaics (PV) are not as high as for the electronic industry. Therefore, alternative and cheaper methods to purify silicon are being developed for the PV market. The key question is what contamination levels in silicon can be considered as acceptable, i.e. what contamination levels are allowed to maintain the performance of the solar cell? Criteria for the specification of solar grade silicon (SoG-Si) that have been published by different authors differ in orders of magnitude and the origin of these values is not always clearly justified [1], [2], [3], [4], [5], [6], [7], [8]. Some of the data together with the contamination levels found in electronic grade silicon (eg-Si) are given in Table 1. In the early eighties, the well-known Westinghouse study was carried out: the performance of solar cells that were made of intentionally contaminated Czochralski-grown single crystalline silicon (sc-Si) wafers were investigated [1]. Recently, Geerligs et al. [7] have started to repeat these extensive experiments for mc-Si.
The objective of this work is to calculate the acceptable contamination levels in silicon at different stages of the solar cell fabrication cycle (see Fig. 1) employing a simple theoretical model and some additional assumptions. An actual industrial process for mc-Si has been considered. Cañizo et al. [6] have done similar calculations for single sc-Si solar cells. In contrast to the sc-Si process, the effects of impurity precipitates in mc-Si have to be taken into account as they can act as impurity sources or as internal gettering sites. The allowed impurity concentration in the finished solar cell , in the silicon wafer and in the silicon feedstock have been calculated for some typical impurities. Finally, several process modifications are discussed that have the potential to relax the previously established requirements on the silicon purity.
Section snippets
Theoretical model
Calculations have been done for p-type silicon devices. The starting point for our model calculations is an electron lifetime in the finished device of s. PC1D simulations, which corresponds to a typical industrial cell structure, have shown that this lifetime value results in an efficiency of about 15%.
Model results
The acceptable contamination levels from feedstock to solar cell have been calculated for four different metal contaminants of different recombination activity and diffusivity (see Table 2): titanium (harmful and slow), chromium (harmful and intermediate velocity), iron (intermediate harmfulness and fast) and copper (benign and very fast). All these metal contaminants form interstitial point defects in silicon. In order to solve Eq. (2), the following assumptions have been made for the
Model discussion
Comparing our model results with literature, a similar trend is observed: the metallic impurity that has to be less abundant in silicon is Ti, closely followed by Cr, while quite big amounts of Fe and somewhat lower amounts of Cu are acceptable. The acceptable Fe concentration in the feedstock is of the same magnitude as the experimental result for mc-Si solar cells by Geerligs et al. [7]. Their threshold value for Ti is by a factor 8 higher than our calculated one.
The main difference with
Relaxation of purity requirements
There are mainly three tools to relax the purity requirements on the silicon wafer that can be applied during the solar cell process: passivation of recombination active point defects, extraction of impurities by means of external gettering and reduction of the interstitial impurity concentration by means of internal gettering.
In a typical industrial solar cell process, a co-firing step is included at the end of the process to form the front and back metallic contacts. During this fast
Conclusions
We have calculated the acceptable contamination levels of Ti, Cr, Fe and Cu in a p-type mc-Si solar cell, in the initial mc-Si wafer and in the silicon feedstock. These four impurity types have been chosen due to their different capture cross-sections and diffusivities within silicon. It results that Fe and Cu may be present in the silicon feedstock in amounts of several ppma whereas Cr and Ti may only have concentrations of some hundredths ppma. Because of the presence of precipitates in
Acknowledgments
This work has been partially funded by the Spanish Ministerio de Educación y Ciencia, through CESIDEL (project ENE2005-9431-C03-02) and through SOLARSÍ (project PSE-120000-2007-12).
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