Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

doi:10.1016/j.microrel.2005.07.019

Microelectronics Reliability

Volume 45, Issues 9–11, September–November 2005, Pages 1349-1354

https://doi.org/10.1016/j.microrel.2005.07.019 Get rights and content

Abstract

This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, V_ds limited and V_gs limited applications in order to improve circuit designs. For V_ds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor.

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Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technology

Abstract

Microelectronics & Reliability

Power MOSFETS-Theory and Applications

Experimental Study of Hot Carrier Effects in LDMOS Transistors

IEEE