doi:10.1016/j.mejo.2006.01.008 
Copyright © 2006 Elsevier Ltd All rights reserved.
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs
L.M. Camilloa, 
, 
, J.A. Martinoa, b, E. Simoenc and C. Claeysc, d
aLaboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, trav. 3 no 158, 05508-900, São Paulo, Brazil
bCentro Universitário da FEI, S. B. do Campo, Brazil
cIMEC, Leuven, Belgium
dE.E. Department, KU Leuven, Leuven, Belgium
Received 3 November 2005;
accepted 29 January 2006.
Available online 31 March 2006.
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Abstract
The zero temperature coefficient (ZTC) is investigated experimentally in partially (PD) and fully depleted (FD) SOI MOSFET fabricated in a 0.13 μm SOI CMOS technology. A simple model to study the behavior of the gate voltage at ZTC (VZTC) is proposed in the linear and the saturation region. The influence of the temperature mobility degradation on VZTC is analyzed for PD and FD devices. Experimental results show that the temperature mobility degradation is larger in FD than in PD devices, which is responsible for the VZTC decrement observed in FD instead of the increment observed in PD devices when the temperature increases. The analysis takes into account temperature dependence model parameters such as threshold voltage and mobility. The analytical predictions are in very close agreement with experimental results in spite of the simplification used for the VZTC model as a function of temperature in the linear and the saturation region.
Keywords: Zero temperature coefficient; Temperature dependence; Silicon on insulator technology; Mobility degradation; Simple model
Fig. 1. Typical IDS×VGF curves for different temperature in linear (A) and saturation (B) region for a PD SOI device with W/L=10 μm/10 μm.
Fig. 2. The ZTC point between temperature T1, T2 and T3.
Fig. 3. VZTC of PD and FD SOI devices operating in the linear region as a function of temperature for c varying between 1 and 3.
Fig. 4. VZTC of PD and FD SOI devices operating in the saturation region as a function of temperature for c varying between 1 and 3.
Fig. 5. The slope of the VZTC bias versus the temperature T2 for PD SOI devices in the linear and the saturation region.
Fig. 6. The slope of the VZTC bias versus the temperature T2 for FD SOI devices in the linear and the saturation region.
Fig. 7. VZTC obtained experimentally and by the simple model for PD SOI devices operating in the linear and the saturation region.
Fig. 8. VZTC obtained experimentally and by the simple model for FD SOI devices operating in the linear and the saturation region.
Table 1.
Maximum variation of the VZTC bias in the temperature range 313–573 K
Table 2.
Sensitivity of the proposed method by analysis of the variation in ΔVZTC with a 10% change in Na and toxf values for PD SOI devices in operating in the linear and the saturation region, respectively
Table 3.
Sensitivity of the proposed method by analysis of the variation in ΔVZTC with a 10% change in Na and tox values for FD SOI devices operating in the linear and the saturation region, respectively
Abstract
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