doi:10.1016/j.mejo.2005.04.059 
Copyright © 2005 Elsevier Ltd All rights reserved.
Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study
L. Harmathaa, M. Ťapajnaa, d, 
, 
, V. Slugeňb, P. Balloc, P. Písečnýa, d, J. Šike and G. Kögelf
aDepartment of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
bDepartment of Nuclear Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
cDepartment of Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava, Slovak Republic
dInstitute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04 Bratislava, Slovak Republic
eON Semiconductor CR, 1. máje 2230, 756 61 Rožnov pod Radhoštěm, Czech Republic
fInstitut für Nukleare Festkörperphysik, Universität der Bundeswehr München, 85577 Neubiberg, Germany
Received 5 April 2005;
revised 9 April 2005;
accepted 16 April 2005.
Available online 1 July 2005.
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Abstract
Czochralski-grown nitrogen-doped (NCZ) silicon was studied using different methods. Measurements of interface traps density, effective generation lifetime and effective surface generation velocity were performed on selected Metal-Oxide-Semiconductor (MOS) structures. Application of the positron annihilation technique (PAS)—pulsed low energy positron system (PLEPS)—was focused on the detection of nitrogen-related defects in NCZ silicon in the near surface region. PAS—PLEPS technique gave relevant results on p-type NCZ silicon. Low sensitivity in the application to n-type NCZ silicon discriminates the PAS—PLEPS technique and should be alternated by other experimental technique. On the other hand, more pertinent measurement of generation lifetime was performed on MOS structures with n-type Si. Although the generation lifetime decreases in NCZ silicon, considerable lateral homogenization of the relaxation time was observed on the wafer.
Keywords: Czochralski-grown silicon; Nitrogen doping; Positron annihilation; Slow positron beam; MOS structure; Generation lifetime
Fig. 1. The deep-depleted (dashed line) and lf (solid line) C–V curves of MOS structure prepared on nitrogen-doped Silicon for (a) n-type and (b) p-type substrate. Typical parameters are listed in the graphs.
Fig. 2. Density of interface traps vs. position in silicon band-gap for MOS structure with CZ and NCZ silicon substrate.
Fig. 3. C-t curves of MOS structures with CZ and NCZ Si as the function of pulsed voltage used during the measurement.
Fig. 4. Lateral distribution of (a) relaxation time and (b) generation lifetime across the 100 mm diam wafer. Average values are depicted by dashed line and also standard deviations are listed in the graph.
Fig. 5. Comparison of PAS—PLEPS lifetime parameters. Mean lifetime (upper panel), positron lifetimes (middle panel) and intensity component of second positron lifetime for n-type (open symbols) and p-type (filled symbols) silicon. CZ and NCZ Si are depicted by triangles and circles, respectively.
Table 1.
Summary of experimental data
Strong change in effective generation lifetime τgeff after nitrogen donation in CZ silicon is well observed. Dit was determined by averaging Dit(E) from the interval ±0.1 eV around the Si mid-gap.
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