Synthesis and high-temperature thermoelectric properties of Ni3GaSb and Ni3InSb

https://doi.org/10.1016/j.jallcom.2011.01.006Get rights and content

Abstract

Ni3GaSb and Ni3InSb were successfully synthesized by the direct reaction of Ni and GaSb or InSb. The XRD patterns and the lattice parameters of these compounds were in good agreement with the literature data. The Seebeck coefficient (S), the electrical resistivity (ρ), and the thermal conductivity (κ) of Ni3GaSb and Ni3InSb were examined in the temperature range from room temperature to 1073 K. Both compounds indicated metal-like characteristics. The power factor (S2ρ−1) values increased with temperature and reached maximum at 1073 K. The κ and the dimensionless figure of merit ZT of both samples increased with temperature. The maximum values of the ZT of Ni3GaSb and Ni3InSb were obtained at 1073 K to be 0.022 and 0.023, respectively.

Research highlights

▶ Ni3GaSb and Ni3InSb were successfully synthesized. ▶ The high-temperature thermoelectric properties were examined. ▶ The maximum ZT were 0.022 and 0.023 for Ni3GaSb and Ni3InSb, respectively.

Introduction

The thermoelectric (TE) technology, used for direct conversion of waste heat into electrical power is expected to substantially contribute to future power supply and sustainable energy management [1], [2]. The efficiency of a material used in TE devices is determined by the dimensionless figure of merit, ZT = S2T/ρ/κ, where S, ρ, T, and κ are the Seebeck coefficient, electrical resistivity, absolute temperature, and thermal conductivity. In order to maximize ZT of the material, S is required to be the highest, but ρ and κ are the lowest. Due to their transport property interrelation, they are needed to be optimized to achieve maximum ZT. In recent years, several classes of bulk materials [3], [4] with high ZT were discovered, including those found for new TE materials [5], [6].

Among the III–V binary semiconductors, gallium antimonide (GaSb) and indium antimonide (InSb) have attracted considerable attention over the last several years. GaSb based binary and ternary alloys have turned out to be important candidates for applications in long wavelength lasers and photodetectors for fiber optic communications [7]. InSb has been interested in high speed applications for transistors and other devices [8], [9], which is associated directly with the very low electron effective mass and high mobility [10].

Based on these interesting electrical properties, the TE properties such as S, ρ, and κ of GaSb and InSb have been examined [11], [12], [13], [14]. For example, Su et al. investigated the TE properties of Zn-doped InSb single crystals and reported the maximum ZT value to be around 0.27 at 700 K [13]. The TE properties of In2Te3–InSb solid solutions were also examined [14]. Ebnalwaled investigated the TE properties of GaSb bulk crystals and reported the power factor value (8.82 × 10−3 mW m−1 K−2 at 322 K) [11]. However, as for ternary compounds containing Ga, In, and Sb, the TE properties have scarcely reported.

As for M-(Ga or In)–Sb ternary compounds, the existing of Ni3GaSb and Ni3InSb have been reported by Jan and Chang [15]. These compounds exhibit the hexagonal, P63/mmc crystal structure – similar to that of Ni3GaAs [16]. The melting points were determined to be >1339 K and >1364 K for Ni3GaSb and Ni3InSb, respectively [15]. However, the physical properties including the TE properties of these compounds are unknown at this moment. In the present study, therefore, we tried to synthesize Ni3GaSb and Ni3InSb and investigate the TE properties from room temperature to 1073 K.

Section snippets

Experimental

The Ni3GaSb and Ni3InSb ternary compounds were synthesized by direct reactions of mixtures of the stoichiometric ratios of Ni (3 N), GaSb (6 N), and InSb (5 N) in sealed silica tubes. These mixtures were processed in a series of steps: preheated at 973 K for 12 h, slowly heated up to 1323 K for 3 days, rapidly cooled to 973 K and held at this temperature for 4 days, and quenched in an ice water bath. The products were crushed and milled into fine powders. Bulk samples were then produced by spark

Results and discussion

The powder XRD patterns of the prepared samples are shown in Fig. 1. Both the samples were identified as Ni3GaSb and Ni3InSb, according to the JCPDS database (Reference codes: 47-1401 for Ni3GaSb and 47-1402 for Ni3InSb) [15], [17], although these compounds contained a few peaks that were inconsistent with the JCPDS data. Therefore, the XRD experimental data were analyzed by the Rietveld refinement [18] on the X-ray diffraction patterns, using the hexagonal crystal system with the space group

Summary

In the present study, Ni3GaSb and Ni3InSb were successfully synthesized and the electrical resistivity (ρ), the Seebeck coefficient (S), and the thermal conductivity (κ) were examined from room temperature to 1073 K. The XRD patterns and the lattice parameters were in good agreement with the previously reported data. The crystal structure was hexagonal with the space group of P63/mmc. The ρ of both compounds increased with temperature, indicating a metal-like behavior. The S values were negative

Acknowledgments

We are grateful to the Thailand Research Fund (TRF) through Royal Golden Jubilee Ph.D. Program (RGJ-Ph.D.); grant number PHD/0078/2550, Thailand for financial support, and the Graduate School of Chiang Mai University for general funding.

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