Thin silicon via crack-assisted layer exfoliation for photoelectrochemical water splitting

Highlights

• Design and fabrication of thin Si photoanode using crack-assisted layer exfoliation

• A systematic investigation of the crack-assisted layer exfoliation method

• Optical simulation on the dependence of photoelectrochemical performance on Si thickness

• Demonstration of thin Si photoanode with notable photoelectrochemical performance

Summary

Silicon (Si) has been widely investigated as a feasible material for photoelectrochemical (PEC) water splitting. Compared to thick wafer-based Si, thin Si (<50 μm thickness) could concurrently minimize the material usage allowing the development of cost-effective and flexible photoelectrodes for integrable PEC cells. This work presents the design and fabrication of thin Si using crack-assisted layer exfoliation method through detailed optical simulations and a systematic investigation of the exfoliation method. Thin free-standing Si photoanodes with sub-50 μm thickness are demonstrated by incorporating a nickel oxide (NiO_x) thin film as oxygen evolution catalyst, light-trapping surface structure, and a rear-pn⁺ junction, to generate a photo-current density of 23.43 mA/cm² with an onset potential of 1.2 V (vs. RHE). Our work offers a general approach for the development of efficient and cost-effective photoelectrodes with Si films with important implications for flexible and wearable Si-based photovoltaics and (opto)electronic devices.