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Computer Physics Communications
Volume 177, Issues 1-2, July 2007, Pages 122-123
Proceedings of the Conference on Computational Physics 2006 - CCP 2006, Conference on Computational Physics 2006
 
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doi:10.1016/j.cpc.2007.02.070    
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Copyright © 2007 Elsevier B.V. All rights reserved.

Kinetic plasma simulations for three dielectric etchers

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Y.J. Honga, H.S. Kob, G.Y. Parkb and J.K. Leeb, Corresponding Author Contact Information, E-mail The Corresponding Author

aDepartment of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea

bDepartment of Electronics and Electrical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea


Available online 28 February 2007.

Abstract

Particle-in-cell Monte Carlo collision (PIC/MCC) modeling of dual frequency asymmetric capacitively coupled plasma (CCP) sources has been carried out. In particular, the following configurations have been modeled: 27/2 MHz system with an electrode separation of 2 cm, 60/2 MHz system with a gap of 4.5 cm, and 162/13.56 MHz system with a gap of 3.2 cm. It is found that both the ion flux to the electrode and the ion bombardment energy can be controlled independently in dual-frequency CCP (DF-CCP). Through kinetic modelings, many of the kinetic characteristics of the plasma discharge of three major dielectric etchers are compared.

Keywords: Dual-frequency; Capacitively coupled plasma; Etcher; Particle simulation; Monte Carlo collision

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Computer Physics Communications
Volume 177, Issues 1-2, July 2007, Pages 122-123
Proceedings of the Conference on Computational Physics 2006 - CCP 2006, Conference on Computational Physics 2006
 
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