ScienceDirect® Home Skip Main Navigation Links
You have guest access to ScienceDirect. Find out more.
 
Home
Browse
My Settings
Alerts
Help
 Quick Search
 Search tips (Opens new window)
    Clear all fields    
Computer Physics Communications
Volume 177, Issues 1-2, July 2007, Pages 108-109
Proceedings of the Conference on Computational Physics 2006 - CCP 2006, Conference on Computational Physics 2006
 
Font Size: Decrease Font Size  Increase Font Size
 Abstract - selected
Article
Purchase PDF (341 K)

Article Toolbox
  E-mail Article   
  Add to my Quick Links   
Bookmark and share in 2collab (opens in new window)
Request permission to reuse this article
  Cited By in Scopus (0)
 
 
 
Related Articles in ScienceDirect
View More Related Articles
 
View Record in Scopus
 
doi:10.1016/j.cpc.2007.02.068    
How to Cite or Link Using DOI (Opens New Window)

Copyright © 2007 Elsevier B.V. All rights reserved.

Atomic-level simulation of non-equilibrium surface chemical reactions under plasma-wall interaction

Purchase the full-text article



References and further reading may be available for this article. To view references and further reading you must purchase this article.

Satoshi Hamaguchia, Corresponding Author Contact Information, E-mail The Corresponding Author, Masashi Yamashiroa and Hideaki Yamadab

aCenter for Atomic and Molecular Technologies, Osaka University, Japan

bDiamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Japan


Available online 27 February 2007.

Abstract

Molecular dynamics (MD) simulations are used for the study of non-thermal-equilibrium reactions that take place on the substrate surface during plasma etching processes. In MD simulations, the motion of each atom is solved numerically based upon pre-determined interatomic potential functions and data of interest (such as sputtering yields, deposition rates, etch products, etc.) are evaluated from statistical averaging of relevant instantaneous data obtained from the simulations. In the present work, MD simulations of organic polymer etching by hydrocarbon beams were performed and atomic-scale morphology of the substrate surface during the etching and its relation to sputtering yields were examined.

Keywords: Molecular dynamics simulation; Etching; Deposition; Plasma processing; Organic polymer

Article Outline

1. Introduction
2. MD simulation of surface sputtering
3. Simulation results
4. Summary
References


Corresponding Author Contact InformationCorresponding author.

Computer Physics Communications
Volume 177, Issues 1-2, July 2007, Pages 108-109
Proceedings of the Conference on Computational Physics 2006 - CCP 2006, Conference on Computational Physics 2006
 
Home
Browse
My Settings
Alerts
Help
Elsevier.com (Opens new window)
About ScienceDirect  |  Contact Us  |  Information for Advertisers  |  Terms & Conditions  |  Privacy Policy
Copyright © 2008 Elsevier B.V. All rights reserved. ScienceDirect® is a registered trademark of Elsevier B.V.