Conduction mechanism of metal-TiO2–Si structures

https://doi.org/10.1016/j.cjph.2016.08.011Get rights and content

Highlights

  • Rutile films were prepared on Si substrates by magnetron sputtering of TiO2 target.

  • The current-voltage and capacitance-voltage characteristics were measured over T = 283–363 K.

  • The conduction model has been proposed for metal-TiO2–Si (MIS) structures.

Abstract

The conduction model has been proposed for the metal-TiO2–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at temperatures T = 800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T = 283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.

Introduction

Functional oxide thin films are of great importance in modern micro- and nanoelectronics, including metal-insulator-semiconductor (MIS) structures [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13]. Titanium oxide films can be used as the key elements in different electronic devices such as memristors, photovoltaic cells, transparent electrodes and gas sensors. A breakthrough in the development of silicon microelectronic is associated with an increased informative capacity that can be achieved by replacing traditional SiO2 on dielectrics with high dielectric permitivity ε. One of the possible candidates for the role of an alternative dielectric is a titanium oxide with a band gap of Eg = (3.0–3.2) eV and ε = 30–80 depending on the structure and phase composition. In the present study, the conduction mechanism is evaluated in metal-TiO2–Si structures.

Section snippets

Experimental methods

Titanium oxide film, with thickness d = 70 nm, were prepared by magnetron sputtering on a silicon epitaxial layer with donor concentration Nd = 7×1014 cm−3. The TiO2 ceramic disc was used as a target for sputtering. The sample preparation details can be found elsewhere [14], [15], [16]. After titanium oxide deposition, the Si substrate with the dielectric film was divided into several parts. One part was not subjected to annealing and two parts were annealed in the Ar atmosphere for 30 min at Ta 

Results and discussion

As deposited titanium oxide films are amorphous. According to XRD spectra, the sample annealed at 800 K possesses a combination of the amorphous phase background and low intensity diffraction peaks. The peaks match well those of the PDF card (No.:43–1012) and can be revealed at 2θ = 25.2°, 27.4° and 56.7° which belong to crystallites of anatase and rutile, as shown in Fig. S1. After annealing at 1050 K, the amorphous phase disappears, and the film becomes polycrystalline rutile (Fig. S2). Thus,

Summary

The influence of annealing temperature of TiO2 films on the currents in metal-TiO2–Si structures was investigated. Regardless of the annealing temperature, the conductivity of the structures at positive potentials on the gate is determined by the space charge-limited current in the dielectric. At negative potentials, the current-voltage characteristics are explained by the thermal generation of electron-hole pairs in the space charge region of Si. The properties of TiO2–Si interface strongly

Acknowledgment

This work was supported by the Ministry of Education and Science of the Russian Federation (Project No 3.1206.2014).

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