ReviewMemristive devices based on graphene oxide
Introduction
The fast and constant development that has characterized the semiconductors industry in the last decades was primarily focused on the miniaturization of devices, in order to achieve a continual improvement of their performances. In this regard, the development of nanoscale structures will be the key point to perpetrate the Moore’s law [1] beyond the actual physical limits, enabling a new era for computing. The development of memristors perfectly fits in this framework, due to their high scalability down to the nanometer scale, as well as the possibility of being exploited in applications such as non-volatile memory and low-power resistive switching devices. For these reasons, since their first demonstration, memristive systems became an issue of investigation for many applications, although their further growth appears to be slowed down due to the complexity in predicting and controlling the chemical/physical mechanisms that lie behind the memristive phenomena, which seem to be extremely stochastic [2].
Despite this drawback, many different working devices were reported in the recent literature. Beside the various perovskite oxide materials [3], [4], binary transition metal oxides (like TiO2 [5], Ta2O5 [6], NiO [7]), chalcogenides [8], [9] and organic materials [10], [11], in the latest years a growing attention was directed to carbon-based devices, in particular to those based on graphene and graphene oxide [12], due to the unique properties of this class of materials.
The aim of this work is to review the recent literature in order to give an overview of the state of the art of graphene-based memristive devices, with a particular attention to their switching mechanism.
This review is organized as follows. In Chapter 2 a brief introduction to the properties and methods for the synthesis of graphene and graphene oxide is given. Chapter 3 introduces the concept of memristor devices, presenting their most relevant proprieties and indicating the characteristics that should define a working device. Chapter 4 is dedicated to the explanation of the Metal/Insulator/Metal mechanism that lies behind graphene oxide based memristive systems. Particular attention is devoted to the discussion of two different mechanisms for resistance switching that were proposed in the literature, i.e. the oxygen ions drift and the metal filament formation. For both mechanisms, a complete description of the phenomena is given and the most significant evidences are summarized. The second part of Chapter 4 is focused on the criteria normally adopted for the choice of materials for the fabrication of top and bottom electrodes, and on the presentation of the characteristics of memristive operation of the different device types. In the last part of Chapter 4 the resistive switching mechanisms in memristive devices based on multilayer structures, conjugated polymer-functionalized GO thin films and their properties are explained. Moreover, a quick overview of other typologies of graphene-based memristive device is given. In Chapter 5 the applications of GO in flexible electronics are summarized. Finally, Chapter 6 gives the conclusive remarks of the review, with a short discussion on future perspectives and developments.
Section snippets
Graphene and graphene oxide
Graphene has attracted worldwide attention because of the strikingly unconventional phenomena that were predicted and measured, which are mainly originated by the fact that electrons behave as massless relativistic particles [13]. From this, a variety of interdisciplinary properties arise, including excellent electron mobility at room temperature (2.5 · 105 cm2 V−1 s−1), high thermal conductivity (5000 Wm−1 K−1), and superior mechanical properties [14], [15], which make this material particularly
Memristors
The existence of a fourth two-terminal circuit component was postulated by Leon O. Chua in 1971 [46], on the basis of a simple logic deduction. Considering the four fundamental circuit variables, i.e. current (I), voltage (V), magnetic flux () and charge (q), six different mathematical relations can be defined in order to invariably couple them. The first two of these relations are given by integrating over time voltage and current, obtaining respectively magnetic flux and charge. Other three
Memristor based on graphene oxide
One of the most common memristor structure reported in literature is the sandwiched Metal/Insulator/Metal (MIM) structure, which can be fabricated using an extremely wide range of metal electrodes and insulators. Graphene oxide synthesized by oxidation and exfoliation of bulk graphite can be easily dispersed in water and then deposited on the bottom electrode material through different techniques, like spin-coating, drop casting, vacuum filtration, ink-jet printing or Langmuir Blodgett
Application of GO in flexible electronics
As previously reported in paragraph 2, GO can be produced from bulk graphite by simple and scalable techniques. GO thin films can be transferred or deposited by a variety of methods, for example by drop casting [89], [36], rapid freezing by spraying [90], dip coating [91], inkjet printing [22], [23], [43] or simply by spin-coating, on any kind of substrate including flexible substrates, and subsequently integrated into practical devices in conjunction with standard CMOS processes [56], allowing
Conclusions
The development of reliable memristive systems is a fundamental technological innovation that will find application in artificial intelligence as resistive random access memory and neuromorphic computing. Several examples of working memristive device based on GO have been proposed in the recent literature, exhibiting good switching proprieties (high switching ratio and low SET and RESET voltage), as well as good retention and endurance times.
However, despite the unique features displayed by GO,
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2022, Journal of Alloys and CompoundsCitation Excerpt :Two-dimensional (2D) materials have recently shown their great potential in memristor with their excellent mechanical and electrical properties [28,29]. A large number of 2D materials have been employed in memristors, ranging from semi-metal of graphene [30–33], semiconductors of transition metal dichalcogenides (TMDCs) [34–38], to insulators of hexagonal boron nitride (h-BN) [39]. Due to a large bandgap of 5.97 eV, a dielectric constant of ~3 and great chemical stability, the h-BN has shown great potential in low power consumption 2D memristors.
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2022, Diamond and Related MaterialsPolymer-based non-volatile resistive random-access memory device fabrication with multi-level switching and negative differential resistance state
2021, Organic ElectronicsCitation Excerpt :Polymer-based resistive memories have been reported as promising alternative devices to formalistic inorganic memory devices, which are also known as semiconductor-based technology [1]. This is because of the benefits of low cost, best scalability, effortless fabrication process, 3D-stacking ability, mechanical flexibility, and an enormous capacity for data storage, which also causes substantial scientific interest as an innovative and encouraging research field [2–4]. To meet the requirements of current information storage, resistive memory phenomena such as static random-access memory (SRAM), write once read many memory (WORM), rewriteable FLASH memory, and dynamic random-access memory (DRAM) have been reported using a polymer as an active layer [5], resistive random-access memory (RRAM) has been considered because of its enhanced storage density, simple structure with complementary metal-oxide structure (CMOS) compatibility, low power consumption, high speed, long endurance, and multilevel information storage [6,7].