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Journal of Magnetism and Magnetic Materials
Volume 267, Issue 3, December 2003, Pages 386-390
 
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doi:10.1016/S0304-8853(03)00407-4    How to Cite or Link Using DOI (Opens New Window)
Copyright © 2003 Elsevier Science B.V. All rights reserved.

High-sensitivity GMR with low coercivity in top-IrMn spin-valves

H. R. LiuCorresponding Author Contact Information, E-mail The Corresponding Author, a, B. J. Qua, T. L. Rena, L. T. Liua, H. L. Xieb, C. X. Lib and W. J. Kub

a Institute of Microelectronics, Tsinghua University, Beijing 100084, China b Hua Xia Mag. Elec. Corp., Shenzhen 518081, China

Received 21 February 2003; 
revised 15 April 2003. 
Available online 29 October 2003.

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Abstract

Top-IrMn spin-valves with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta have been investigated. The spin-valves were deposited by high vacuum DC magnetron sputtering at room temperature. The magnetoresistance ratio reaches 9.12% at room temperature. The coercivity of the free layer and the exchange bias field is 1.04 and 180 Oe, respectively. The maximum sensitivity of the spin-valves is 8.36%/Oe. A reduction of 33.2% of the coercivity was obtained after a 2-min RIE process. Utilizing standard integrated circuit (IC) process, mass production of robust giant magnetoresistance sensors can be achieved with these spin-valve thin films.

Author Keywords: GMR; Spin-valve; Coercivity

PACS classification codes: 75.70.Pa; 85.75.−d; 85.70.−w

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