Copyright © 2003 Elsevier Science B.V. All rights reserved.
High-sensitivity GMR with low coercivity in top-IrMn spin-valves
Received 21 February 2003;
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Abstract
Top-IrMn spin-valves with a structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta have been investigated. The spin-valves were deposited by high vacuum DC magnetron sputtering at room temperature. The magnetoresistance ratio reaches 9.12% at room temperature. The coercivity of the free layer and the exchange bias field is 1.04 and 180 Oe, respectively. The maximum sensitivity of the spin-valves is 8.36%/Oe. A reduction of 33.2% of the coercivity was obtained after a 2-min RIE process. Utilizing standard integrated circuit (IC) process, mass production of robust giant magnetoresistance sensors can be achieved with these spin-valve thin films.
Author Keywords: GMR; Spin-valve; Coercivity
PACS classification codes: 75.70.Pa; 85.75.−d; 85.70.−w







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