doi:10.1016/S0169-4332(03)00425-2 
Copyright © 2003 Elsevier Science B.V. All rights reserved.
Chemical and electronic structures of Lu2O3/Si interfacial transition layer
H. Nohira
, 
, a, T. Shiraishia, T. Nakamuraa, K. Takahashia, M. Takedab, S. Ohmib, H. Iwaib and T. Hattoria
a Department of Electrical and Electronic Engineering, Musashi Institute of Technology Engineering, 1-28-1 Tamazutumi, Setagaya, Tokyo 158-8557, Japan
b Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
Available online 25 April 2003.
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Abstract
The composition of transition layer (TL) formed between Lu2O3 and Si(1 0 0) substrate was determined non-destructively by applying newly developed depth profiling method to the angle-resolved Si 2p and Lu 4d photoelectron spectra. The conduction and valence band alignments of Lu2O3 with respect to Si(1 0 0) were also determined from the measurement of O 1s photoelectron spectra and valence band spectra.
Author Keywords: High-K; Lu2O3; Transition layer; Silicate; Depth profiling; XPS
Fig. 1. XRD patterns of samples A and B: these XRD patterns indicate that sample A is in amorphous state, while sample B is identified as Lu2O3 having cubic structure preferentially oriented to Si(2 2 2).
Fig. 2. (a) Lu 4d spectrum and (b) O 1s spectrum measured at photoelectron take-off angle (
θ) of 15°.
Fig. 3. (a) Angle-resolved Si 2p
3/2 photoelectron spectra measured for Lu
2O
3/TL/Si(1 0 0), (b) those measured for silicon oxide/Si(1 0 0).
Fig. 4. Lu 4d spectral intensity arising from Lu
2O
3 and the Si 2p spectral intensity arising from TL normalized by Si 2p spectral intensity arising from Si substrate as a function of
θ. Solid curves are calculated using the compositional depth profile shown in
Fig. 5(a).
Fig. 5. (a) Electron escape depth as a function of distance (
y) from the oxide surface, (b) composition
p(
y) as a function of distance (
y) from the oxide surface for Lu
2O
3/TL/Si(1 0 0).
Fig. 6. Si 2p spectral intensity arising from Lu silicate and SiO
2 normalized by Si 2p spectral intensity arising from Si substrate as a function of
θ. Solid and dotted curves are calculated using the three layers model shown in the inset.
Fig. 7. (a) O 1s photoelectron spectrum measured at
θ of 15°, (b) valence band spectrum measured at
θ of 15 and 90°. The spectrum obtained by subtracting the valence band spectrum of Si substrate measured at
θ of 90° from the spectrum measured at
θ of 15° is shown by the cross.
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