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10 to 2000 eV are calculated for atomic silicon and its compounds SiH4, Si2H6, Si(CH3)4, SiO, SiO2, SiN and SiS, important in plasma and astrophysical applications. In each case total inelastic cross-sections are determined in the complex potential formalism and are partitioned into discrete and continuum excitation contributions in order to derive total ionization cross-sections. The present total (complete) cross-sections and total ionization cross-sections are found to be in a good general agreement with the previous data available for Si, SiH4, Si2H6 and Si(CH3)4. This paper also reports the first theoretical ionization cross-sections for new targets SiO, SiO2, SiN, and SiS for which almost no work of this kind has appeared in literature so far.
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doi:10.1016/S0168-583X(03)01480-0 
Copyright © 2003 Elsevier B.V. All rights reserved.
Electron impact ionization of H2O molecule in crystalline ice
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Minaxi Vinodkumarb, K. N. Joshipura
, 
, a, C. G. Limbachiyac and B. K. Antonya
Available online 5 June 2003.
Abstract
The present work focuses on electron impact scattering in crystalline ice, which is an exotic solid. The major difference between crystalline form and amorphous form lies in its structure. Here we consider the H2O molecule to possess properties consistent with the ice structure. Our basic calculation rests on the complex optical potential for the e-molecule system, with the molecular charge density as an input. To examine a single scattering event in condensed phases, we build up a model scattering potential to determine total inelastic cross-section Qinel. Finally an estimate of the total ionization cross-section, Qion for H2O (free), H2O (amorphous) and H2O (ice) in the energy range from threshold to 2000 eV, is obtained through semi-empirical arguments.
