Elsevier

Thin Solid Films

Volume 287, Issues 1–2, 30 October 1996, Pages 252-257
Thin Solid Films

Fabrication and characterization of MOS devices on 3CSiC films grown by reactive magnetron sputtering on Si(111) substrates

https://doi.org/10.1016/S0040-6090(96)08788-3Get rights and content

Abstract

We report on the fabrication and characterization of the metal oxide semiconductor structure on 3CSiC films grown by reactive magnetron sputtering on Si(111) substrates. The SiO2 layer was thermally grown by a dry oxidation process at 1200 °C. Auger electron spectroscopy showed that the SiO2 layer was free from carbon-related compounds except for the region very close to the SiO2/SiC interface. Cross-sectional transmission electron microscopy showed a homogeneous SiO2 layer with a well-defined interface to 3CSiC. Electrical properties of the MOS structure were analyzed by capacitance-voltage (C-V) and conductance-voltage (G-V) techniques. C-V curves showed accumulation, depletion, and deep-depletion phases. The capacitance in the inversion regime was not saturated, as is usually observed for wide-bandgap semiconductors. The density of positive charges in the grown oxide and the interface states were extracted using the high-frequency C-V and the conductance techniques. The interface state density was found to be in the range 3–7 × 1011 cm−2 eV−1. The doping concentration (Nd) in the 3C-SiC film extracted from 1/C2 plot was 2.8 × 1015 cm−3.

References (27)

  • Q. Wahab et al.

    J. Mater. Sci. Eng.

    (1992)
  • M. Karlsteen et al.

    J. Diamond Related Mater.

    (1992)
  • J.R. Brews

    Solid-State Electron.

    (1983)
  • A. Arbab et al.

    J. Sensors Mater.

    (1993)
  • T. Sugii et al.

    IEEE Trans. Electron Devices

    (1990)
  • A. Solangi et al.

    Amorphous and crystalline silicon carbide

  • M. Bhatnagar et al.

    IEEE Trans. Electron Devices

    (1993)
  • S. Nishino et al.

    Appl. Phys. Lett.

    (1983)
  • S. Nishino et al.

    Amorphous and crystalline silicon carbide

  • S. Motoyoma et al.

    J. Appl. Phys.

    (1990)
  • Q. Wahab et al.

    J. Appl. Phys.

    (1993)
  • Q. Wahab et al.

    Appl. Phys. Lett.

    (1994)
  • R. Tomasiunas et al.

    J. Semicond. Sci. Technol.

    (1992)
  • Cited by (0)

    1

    Permanent address: Department of Physics, Middle East Technical University, 06531 Ankara, Turkey.

    View full text