Abstract
Purchase PDF (513 K)
E-mail Article
Add to my Quick Links
Cited By in Scopus (5)
40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 μC/cm2), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices.
Purchase PDF (818 K)
doi:10.1016/S0040-6090(01)01784-9 
Copyright © 2002 Elsevier Science B.V. All rights reserved.
Dielectric and ferroelectric response of sol–gel derived Pb0.85La0.15TiO3 ferroelectric thin films on different bottom electrodes
Received 8 December 2000;
References and further reading may be available for this article. To view references and further reading you must purchase this article.
Abstract
Sol–gel derived Pb0.85La0.15TiO3 thin films were deposited on Pt, Pt/Si, RuO2/Pt/Si and RuO2/Si bottom electrodes. The structural and microstructural characteristics of the films were studied using X-ray diffraction and atomic force microscopy techniques. Dielectric, ferroelectric and leakage current characteristics were evaluated and depth profile Auger electron spectroscopy was used to obtain direct evidence for reactivity and compositional changes at the film/electrode interface and determine their effect on the ferroelectric and dielectric properties of films. Films deposited on Pt electrode showed a relatively higher dielectric constant of approximately 1300, while the films on RuO2 exhibited lower dielectric constant of only 470. J–t characteristics with leakage current of approximately 10−8 A/cm2 under low biasing field (10 kV/cm) was observed for the films under study. The steady state field dependent dc conductivity was examined by the measurement of J–E characteristics. At very low fields (<30 kV/cm) films followed ohmic behavior and was fitted with a space-charge-limited conduction mechanism in the intermediate fields (30–60 kV/cm). The on-set voltage for the non-linearity was considered as VTFL using which, the trap concentration estimated for films on RuO2/Si electrode was 1.23×1017 cm−3. Observed current characteristics have been correlated with large interfacial resistance at the film–electrode boundary. In the case of RuO2 bottom electrodes, the dielectric and ferroelectric properties are correlated with the electrode characteristics and Si diffusion at the film–electrode interface.
Author Keywords: Sol–gel; Bottom electrodes; Auger electron spectroscopy; Ruthenium oxide; Ferroelectric properties; Ruthenium
