MOCVD growth of InAsN for infrared applications
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Cited by (72)
A RHEED/MBE-STM investigation of the static and dynamic InAs(001) surface
2017, Journal of Crystal GrowthCitation Excerpt :InAs and its derivatives, particularly N- [1] and Bi-containing [2–6], have attracted considerable interest as materials for optoelectronic devices across the IR region [1,6–10], type-II heterostructures [8] and high speed electronics [11]. This is due to the high carrier mobility [2,10], an InAs band gap of 0.36 eV at room temperature [12], and the proximity of its lattice constant to the technologically important 6.1 Å family [13], Despite this promise, there appears to have been little work on the fundamental aspects of InAs growth, especially when compared with GaAs, for which surface reconstruction boundaries and the kinetics of growth have been probed extensively, including with respect to the incorporation of arsenic into the growing surface [14–18].
Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE
2011, Journal of Crystal GrowthCitation Excerpt :Several studies on photoluminescence (PL) from InAsN films grown on InAs substrates have been reported, and have demonstrated the potential as a material for mid-infrared optical devices [1–3]. As in other III–V–N type alloys such as GaAsN, InAsN has a huge bandgap bowing that gives a significant bandgap reduction with N incorporation [4]. The observation of the bandgap reduction in InAsN by optical absorption, however, is often somewhat obscure due to the band-filling effect (or Burstein–Moss effect) caused by the high electron concentration associated with N incorporation [5–10].
Strong composition-dependent disorder in InAs<inf>1-x</inf>N<inf>x</inf> alloys
2009, Journal of Alloys and CompoundsGrowth and characterisation of dilute antimonide nitride materials for long-wavelength applications
2009, Microelectronics Journal