MOCVD growth of InAsN for infrared applications

doi:10.1016/S0038-1101(96)00236-5

Solid-State Electronics

Volume 41, Issue 2, February 1997, Pages 319-321

https://doi.org/10.1016/S0038-1101(96)00236-5 Get rights and content

Abstract

The ternary alloy InAsN has been grown by MOCVD for the first time. The growth was performed at 70 Torr using TMI, AsH₃ and NH₃ as source gases and GaAs(100) as substrate. The growth temperature and AsH₃ to NH₃ gas phase ratio, $NH_{3} AsH_{3}$ , were changed from 550 to 750°C and 100 to 1000, respectively. InAs was also grown at 100 Torr and 500°C. All the samples were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) at room temperature. The increase in growth temperature and gas phase ratio of NH₃ made the nitrogen solid composition larger. All the samples have a direct band gap which decreases with increasing nitrogen content. The smallest band gap energy of 0.12 eV at room temperature was obtained for InAs_0.939N_0.061.

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InAs and its derivatives, particularly N- [1] and Bi-containing [2–6], have attracted considerable interest as materials for optoelectronic devices across the IR region [1,6–10], type-II heterostructures [8] and high speed electronics [11]. This is due to the high carrier mobility [2,10], an InAs band gap of 0.36 eV at room temperature [12], and the proximity of its lattice constant to the technologically important 6.1 Å family [13], Despite this promise, there appears to have been little work on the fundamental aspects of InAs growth, especially when compared with GaAs, for which surface reconstruction boundaries and the kinetics of growth have been probed extensively, including with respect to the incorporation of arsenic into the growing surface [14–18].
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Effect of precursor flux on compositional evolution in InP <inf>1-x</inf>Sb<inf>x</inf> nanowires grown via self-catalyzed vaporliquidsolid process
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We investigated the effect of high flow rates (> 10⁻⁵ mol/min) of metalorganic precursors on compositional evolution in indium phosphide antimonide (InP_1−xSb_x) nanowires grown via chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates maintained at ∼360 °C. The as-grown nanowire morphology, composition, and crystallinity are determined using scanning and transmission electron microscopies, selected-area electron diffraction, and x-ray energy dispersive spectroscopy. For all of the precursor flow rates, we obtain zinc blende structured InP_1-xSb_x wires that are tapered with wider tops, narrower bases, and In-rich In–Sb alloy tips—characteristic of the vapor–liquid–solid process. The Sb content within the InP_1−xSb_x wires is found to increase non-linearly with increasing Sb precursor flow rate. At the interfaces between the In–Sb alloy tips and the InP_1-xSb_x nanowires, we observe single-crystalline wurtzite-structured InSb segments whose volumes depend on the Sb precursor flow rate. We attribute this phenomenon to the rapid crystallization of InSb during cooling of the Sb-rich In–Sb alloy droplets.
Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE
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Several studies on photoluminescence (PL) from InAsN films grown on InAs substrates have been reported, and have demonstrated the potential as a material for mid-infrared optical devices [1–3]. As in other III–V–N type alloys such as GaAsN, InAsN has a huge bandgap bowing that gives a significant bandgap reduction with N incorporation [4]. The observation of the bandgap reduction in InAsN by optical absorption, however, is often somewhat obscure due to the band-filling effect (or Burstein–Moss effect) caused by the high electron concentration associated with N incorporation [5–10].
The observation of bandgap reduction in InAsN by optical absorption is often somewhat obscure due to the band-filling effect caused by the high electron concentration associated with N incorporation. In this report, the detailed photoluminescence properties of 1.6-μm-thick InAsN films grown on semi-insulating GaAs(0 0 1) substrates by RF-MBE are investigated in relation with the carrier concentration. The PL peak energy at 10 K clearly exhibits a redshift with increase in N content up to 1.84%, whereas it tends rapidly to a blueshift for N contents above 2.39%. The redshift is consistent with the bandgap reduction caused by the N incorporation, whereas the blueshift is attributed to the band-filling effect caused by the highly concentrated degenerate electrons. Moreover, it is found that the temperature dependent PL and the excitation power dependent PL are largely affected by carrier concentration and the potential fluctuations due to the non-uniform incorporation of N into the host. The bowing parameter c estimated from fitting with the quadratic curve, (1−x)E_G,InAs+xE_G,InN-c(1−x)x, is 2.2 eV.
Strong composition-dependent disorder in InAs<inf>1-x</inf>N<inf>x</inf> alloys
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We investigate the main causes of disorder in the InAs_1−xN_x alloys (x = 0, 0.03125, 0.0625, 0.09375, 0.125, 0.25, 0.5, 0.75, 0.875, 0.90625, 0.9375, 0.96875 and 1). The calculation is based on the density-functional theory in the local-density approximation. We use a plane wave-expansion non-norm conserving ab initio Vanderbilt pseudopotentials. To avoid the difficulty of considering the huge number of atomic configurations, we use an appropriate strategy in which we consider four configurations for a given composition where the N atoms are not randomly distributed. We mainly show that the band gap decreases (increases) rapidly with increasing (decreasing) compositions of N. As a consequence the optical band gap bowing is found to be strong and composition dependent. The obtained compounds, from these alloys, may change from semi-conducting to metal (passing to a negative bowing) and could be useful for device applications, especially at certain composition.
Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications
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The addition of small amounts of nitrogen to III–V semiconductors leads to a large degree of band gap bowing, giving rise to band-gaps smaller than in the associated binary materials. The incorporation of active nitrogen has been previously demonstrated for InN_xSb₁₋_x (x⩽0.7%) and GaN_xSb₁₋_x (x⩽1.75%) material; however, the as-grown carrier concentrations precluded incorporation into a device structure. Here we report the reduction in the as-grown carrier concentration in InNSb by annealing, whilst retaining the active nitrogen content. FTIR absorption measurements show the first direct experimental evidence of narrowing of the InSb bandgap due to nitrogen incorporation. As an alternative route to defect reduction and device compatible material we report on the growth of Ga₁₋_yIn_yN_xSb₁₋_x with 0⩽y⩽30% and x=1.6±0.2% and demonstrate near lattice matching of the material to GaSb.
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2009, Journal of Alloys and Compounds
The band gap bowings of ${InN}_{x} {As}_{1 - x}$ , ${InN}_{x} {Sb}_{1 - x}$ , and ${InAs}_{x} {Sb}_{1 - x}$ alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with ${sp}^{3} d^{2}$ basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both ${InN}_{x} {As}_{1 - x}$ and ${InN}_{x} {Sb}_{1 - x}$ compared to ${InAs}_{x} {Sb}_{1 - x}$ alloys. Moreover, the variation of the fundamental band gaps of ${InN}_{x} {Sb}_{1 - x}$ alloys is sharper than that of ${InN}_{x} {As}_{1 - x}$ alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in ${InN}_{x} {Sb}_{1 - x}$ than in ${InN}_{x} {As}_{1 - x}$ alloys to decrease the corresponding effective masses of the electrons around $Γ$ points.

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MOCVD growth of InAsN for infrared applications

Abstract

Japn. J. Appl. Phys.

Appl. Phys. Lett.