Fig. 1. Cross-section of a 0.25 μm PD SOI MOSFET (silicon active film of 100 nm) with a TiSi₂ salicidation process for the gate, drain and source areas.

Fig. 2. 0.25 μm FD SOI MOSFET (silicon active thin-film of 40 nm) with a recessed-channel process.

Fig. 3. On–off characteristics at V_ds=1.8 V.

Fig. 4. Propagation delay versus power consumption.

Fig. 5. Comparison between FD and PD SOI MOSFETs: evolution of NF_min and G_ass as function of the drain current density @ 6 GHz; V_ds=1 V; n×W×L_g=12×6.6×0.25 μm².

Fig. 6. Cutoff frequencies f_T, f_max, and NF_min versus the drain current density @ 6 GHz in the case of FD-MOSFET; V_ds=1 V; n×W×L_g=12×6.6×0.25 μm².

Fig. 7. State-of-the-art high frequency NF_min and G_ass @ 2 GHz for different published results of MOSFET technologies.

Fig. 8. Comparison between measured and calculated S-parameters up to 40 GHz in the case of FD device. V_ds=1 V; J_ds=80 mA/mm; n×W×L_g=12×6.6×0.25 μm². Dashed lines correspond to simulated data.

Fig. 9. Comparison between measured and calculated noise parameters up to 18 GHz for FD SOI MOSFET. V_ds=1 V; J_ds=80 mA/mm; n×W×L_g=12×6.6×0.25 μm². Dashed lines correspond to simulated data.

Fig. 10. Calculated NF_min versus frequency of hypothetical MOSFET with three kinds of gate processes. The “Salicide” curve corresponds to measured data of the FD SOI MOSFET described in this work.

Table 1. Baseband circuit specifications

Table 2. Small signal equivalent circuit elements for a 12×6.6×0.25 FD SOI MOSFET; V_ds=1 V; J_ds=25 mA/mm

Table 3. Hypothetical values of parasitic resistances used for the calculation of noise characteristics