Raman scattering by surface polaritons in cubic GaN epitaxial layers
References (9)
- et al.
J. Appl. Phys.
(1994) - et al.
Appl. Phys. Lett.
(1995)et al.J. Appl. Phys.
(1996) - et al.
- et al.
Phys. Rev. Lett.
(1973)
There are more references available in the full text version of this article.
Cited by (16)
Effect of surface phonon polariton in unimplanted and oxygen implanted GaN layers
2021, OptikCitation Excerpt :The main application of SPP phenomena using III-Nitride materials are to fabricate the reflection-type sensor in the mid-infrared region [17], Near Field Infrared Microscopy [18], photonic devices [17–19] etc. Surface phonon polariton has been studied by many researchers in III-Nitride layers (GaN, AlN, AlGaN, etc.) [20–26]. Davydov et al. [20] explained the SPP mode in cubic GaN crystal grown on GaAs (001) substrate using Raman scattering.
Surface phonon polariton of wurtzite GaN thin film grown on c-plane sapphire substrate
2008, Solid State CommunicationsAn attenuated-total-reflection study on the surface phonon-polariton in GaN
2000, Journal of Physics Condensed MatterResonant enhancement of Raman scattering by surface phonon polaritons in GaAs nanowires
2021, Journal of Physics D: Applied Physics
Copyright © 1997 Published by Elsevier Ltd.