Elsevier

Solid State Communications

Volume 104, Issue 7, November 1997, Pages 397-400
Solid State Communications

Raman scattering by surface polaritons in cubic GaN epitaxial layers

https://doi.org/10.1016/S0038-1098(97)00346-3Get rights and content

Abstract

We present the results of Raman experiments on cubic GaN epitaxial layers grown on (0 0 1) GaAs substrates. A distinct line observed at the low-frequency edge of the LO phonon in the backscattering spectra is shown to be due to the upper surface polariton mode. We show that the high transparency of the layer results in a weak efficiency of scattering by the lower polariton mode and strong increase of the scattering in backward configuration. The research reveals a high sensitivity of the surface polariton mode to the film thickness, doping level and quality of the GaNGaAs interface.

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Cited by (16)

  • Effect of surface phonon polariton in unimplanted and oxygen implanted GaN layers

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    The main application of SPP phenomena using III-Nitride materials are to fabricate the reflection-type sensor in the mid-infrared region [17], Near Field Infrared Microscopy [18], photonic devices [17–19] etc. Surface phonon polariton has been studied by many researchers in III-Nitride layers (GaN, AlN, AlGaN, etc.) [20–26]. Davydov et al. [20] explained the SPP mode in cubic GaN crystal grown on GaAs (001) substrate using Raman scattering.

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