doi:10.1016/S0026-2714(00)00199-2
Copyright © 2001 Elsevier Science Ltd. All rights reserved.
A wavelet analysis of 1/f and white noise in microwave transistors
Gaetano Ferrante and Dominique Persano Adorno
, 
Dipartimento di Fisica e Tecnologie Relative, Istituto Nazionale di Fisica della Materia, Viale delle Scienze, 90128 Palermo, Italy
Received 3 April 2000;
revised 24 July 2000.
Available online 22 December 2000.
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Abstract
The results of a computer-controlled experiment devoted to on-line measurements of the wavelet transform (WT) of low-frequency electronic noise voltage in bipolar microwave transistors are presented. We measure the average recurrence time of fluctuations of the WT coefficients occurring selectively in limited time and at frequency intervals. We detect two quite different behaviors in such recurrence times in the 1/f and white noise regimes.
Fig. 1. Spectral density of the low-frequency noise in the HSB2 transistor. The bias collector current is 3.14 mA and Vce=5 V. 1/f noise is observed below 10 kHz.
Fig. 2. Block scheme of the experimental setup. DUT indicates the device under test.
Fig. 3. Typical wavelet spectrum for f0=316 Hz. The dashed line indicates the average value and the dashed–dotted line is the chosen threshold value. Arrows delimit the measured recurrence times.
Fig. 4. Two illustrative examples of the measured probability density function of the recurrence time τ. The line labeled as (α) is obtained in the 1/f regime (f0=316 Hz) while line (β) belongs to the white noise regime (f0=31 600 Hz).
Fig. 5. Double logarithmic plot of the average recurrence time as a function of the generating wavelet frequency. The experimental points are obtained with a threshold as described in the text and illustrated in Fig. 3 for all points except one (
). This single point has been obtained with a higher threshold (see text for details).