A method to minimize test time for accelerated ageing of pHEMT's by analysis of the electronic fingerprint of the initial stage of degradation
References (5)
- et al.
Degradation of performance in MESFETs and HEMTs : simulation and measurement of reliability
Microelectronics Reliability
(1998) - et al.
Failure mechanisms of Schottky gate contact degradation and deep traps creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests
Microelectronics Reliability
(1998)
There are more references available in the full text version of this article.
Cited by (0)
Copyright © 2000 Published by Elsevier Ltd.