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flow−3/4). We believe that this is related to the change in group V vacancy concentration as the group V beam flux is varied. A smaller dependence of C incorporation was also observed with the growth temperature.
doi:10.1016/S0026-2714(00)00079-2 
Copyright © 2000 Elsevier Science Ltd. All rights reserved.
Invited paper
Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
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Jürgen Berntgen
, 
, a, Alexander Behresa, Jürgen Klutha, Klaus Heimea, Walter Daumannb, Uwe Auerb and Franz-Josef Tegudeb
Received 15 November 1999;
Abstract
The 1/f noise of various InGaAs layers lattice matched to InP is investigated systematically at room temperature. To elucidate the origin of the 1/f noise in this type of III–V compound semiconductor, thick n-type doped InGaAs layers, typical InP based InAlAs/InGaAs or InP/InGaAs heterostrucuture field-effect transistor (HFET) structures, respectively, as well as InP based InAlAs/InGaAs quantum well structures with doped InGaAs two-dimensional electron gas (2DEG) channel are analysed. From the experiments it is found that mobility fluctuation is the only origin for the 1/f noise observed both in InGaAs bulk material and in 2DEG heterostructures of high quality. A Hooge parameter attributed to phonon scattering αHphon in the bulk material is found to be about 7×10−6 and agrees with those obtained from HFET structures with the highest mobilities (αH≈1.5×10−5). Furthermore, the Hooge parameter of 2DEG structures strongly depends on the channel design and on the doping concentration in the n-type doped 2DEG channels.
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Corresponding author. Tel.: +49-241-807746; fax: +49-241-8888199; email: juergenb@iht.rwth-aachen.de
