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300 °C) molecular beam epitaxial growth of high Ge content Si/SiGe modulation-doped multiple quantum well structures on Si0.5Ge0.5 pseudosubstrates. High-resolution X-ray reflectivity and diffraction experiments performed at the Swiss Light Source synchrotron, as well as analysis by transmission electron microscopy, showed very good control of the growth parameters and interface r.m.s. roughness as low as 0.4 nm.
doi:10.1016/S0022-0248(02)01649-4 
Copyright © 2002 Elsevier Science B.V. All rights reserved.
Strained GaInAsP/InP multiple quantum well structures grown by solid source molecular beam epitaxy
Received 22 June 2002;
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Abstract
We report successful growth of the n-type strained GaInAsP/InP multiple quantum well (MQW) structures using all solid source molecular beam epitaxy and the effects of doping density in the wells on the quality of the MQW structures. In the high-resolution X-ray diffraction curves, well-defined sharp satellite peaks up to the 15th order can be observed, indicating a very high crystalline quality of the MQW structures. With increase of Si-doping concentration in the wells, the lattice mismatch increases. The FWHM of the zero-order peak also increases and fits a logistic function well with the doping density. The period of the MQW structures is found to decrease and the intensity of the first-order satellite peak to decays exponentially. All the observations can be explained by the changes in lattice constant, interface defects, dopant diffusion and possibly growth rate, caused by high doping in the wells of the MQW structures.
Author Keywords: A1. Lattice mismatch; A1. X-ray diffraction; A3. Multiple quantum wells; A3. Solid source molecular beam epitaxy
PACS classification codes: 68.55.Bd; 68.65.+g
