Spectral optical functions of silicon in the range of 1.13-4.96 eV at elevated temperatures
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Cited by (49)
Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications
2012, Thin Solid FilmsCitation Excerpt :A schematic sketch of the simulated geometry with the used coordinate system and numbered boundaries is shown in Fig. 3. The thermal and optical properties used in the simulations are listed in Table 1 and were taken from [15–18]. In the simulations the a-Si film on the wafer can be neglected, since the absorption in this thin film is negligible and the lateral heat conduction is very small as compared to that of the wafer.
CW laser induced crystallization of thin amorphous silicon films deposited by EBE and PECVD
2012, Applied Surface ScienceCitation Excerpt :As for the EBE case (sample F), the samples B to E were laser annealed with the 808 nm diode laser at a heating temperature of 480 °C. Heating allows us to improve the low absorption of layers containing hydrogen since the absorption coefficient increases with temperature [25]. For samples B and C which were thermal annealed at 450 °C/3 h and 550 °C/3 h respectively, bubbles and dewetting are observed by scanning electron microscopy analysis.
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Visiting Research Associate, R & D Center, SAMSUNG ELECTROMECHANICS CO., LTD., Suwon, Korea.