Thermal properties of C/H-, C/H/O-, C/H/N- and C/H/X-grown polycrystalline CVD diamond

https://doi.org/10.1016/0925-9635(94)05229-8Get rights and content

Abstract

Over 60 CVD diamond films with thicknesses in the range 2–600 μm, grown from C/H, C/H/O, C/H/Cl and C/H/N gas mixtures by microwave plasma CVD, combustion flame synthesis and r.f. plasma torch CVD, were compared in terms of their thermal, morphological, Raman and luminescence data. Correlation diagrams reveal that the content of sp2-hybridized carbon is the main factor determining the thermal properties of the films. Other parameters, e.g. thickness, crystallinity and defects, only influence the thermal performance by changing the phase purity. The presence of oxygen and nitrogen in the CVD gas phase restricts the thermal conductivity of the films to values well below the 2200 ± 200 W m−1 K−1 achieved for polycrystalline films, 250 μm thick, grown from methane and hydrogen. Diamond films with thicknesses of less than 4 μm and thermal conductivities of more than 700 W m−1 K−1 were grown from C/H and C/H/O mixtures.

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