Structural phase transition of GaTe at high pressure

doi:10.1016/0925-8388(95)01559-0

Journal of Alloys and Compounds

Volume 224, Issue 2, 1 July 1995, Pages 212-216

https://doi.org/10.1016/0925-8388(95)01559-0 Get rights and content

Abstract

We have investigated structural stability and electronic properties of the layered semiconductor GaTe under hydrostatic pressure by X-ray powder diffraction and optical reflectivity measurements in a diamond anvil cell. The monoclinic low-pressure modification undergoes a first-order phase transition at 10(1) GPa into a high-pressure polymorph of the NaCl type structure. Thermal annealing at 475 K and 12 GPa for 12 h turned out to be essential for obtaining well-crystallized samples of the high-pressure phase. The reconstructive structural change is accompanied by a semiconductor-to-metal transition. The cubic modification is metastable with decreasing pressures down to 3 GPa and transforms to an amorphous phase at lower pressures.

References (30)

J.L Brebner et al.
J. Phys. Chem. Solids
(1962)
S Geller et al.
J. Phys. Chem. Solids
(1965)
T Chattopadhyay et al.
J. Phys. Chem. Solids
(1985)
P.C Donohue et al.
J. Solid State Chem.
(1970)
M Julien-Pouzol et al.
Acta Crystallogr. B
(1979)
S.A Semiletov et al.
Sov. Phys. Crystallogr.
(1964)
T Wadsten
Acta Chem. Scand.
(1965)
T Wadsten
Acta Chem. Scand.
(1967)
R.D Shannon et al.
Acta Crystallogr. B
(1969)

A Neuhaus

Chimia

(1964)

A.J Darnell et al.

Science

(1963)

M.D Banus et al.

Science

(1963)

A.J Darnell et al.

Phys. Rev.

(1964)

S Geller et al.

Appl. Phys. Lett.

(1964)

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GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, α-GaGeTe ( $R \bar{3} m$ ) and β-GaGeTe ( $P 6_{3} m c$ ). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes in high-pressure conditions. Both polytypes show anisotropic compressibility and two phase transitions, above 7 and 15 GPa, respectively, as confirmed by XRD and Raman spectroscopy measurements. Although the nature of the high-pressure phases could not be confirmed, comparison with other chalcogenides and total-energy calculations allow us to propose possible high-pressure phases for both polytypes with an increase in coordination for Ga and Ge atoms from 4 to 6. In particular, the simplification of the X-ray pattern for both polytypes above 15 GPa suggests a transition to a structure of relatively higher symmetry than the original one. This result is consistent with the rocksalt-like high-pressure phases observed in parent III-VI semiconductors, such as GaTe, GaSe, and InSe. Pressure-induced amorphization is observed upon pressure release. The electronic band structures of α-GaGeTe and β-GaGeTe and their pressure dependence also show similarities to III-VI semiconductors, thus suggesting that the germanene-like sublayer induces a semimetallic character in both GaGeTe polytypes. Above 3 GPa, both polytypes lose their topological features, due to the opening of the direct band gap, while the reduction of the interlayer space increases the thermal conductivity at high pressure.
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ChemistryStructural phase transition of GaTe at high pressure

Abstract

J. Phys. Chem. Solids

J. Phys. Chem. Solids

J. Phys. Chem. Solids

J. Solid State Chem.

Acta Crystallogr. B

Sov. Phys. Crystallogr.

Acta Chem. Scand.

Acta Chem. Scand.

Acta Crystallogr. B

Chimia

Science

Science

Phys. Rev.

Appl. Phys. Lett.

Chemistry
Structural phase transition of GaTe at high pressure