Growth and characterization of metal-organic vapour phase epitaxial Ga1−xInxAsySb1−y quaternary layers

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Abstract

The growth in the miscibility gap and the characterization of MOVPE Ga1−xInxAsySb1−y quaternary layers have been undertaken. The experimental conditions have been determined to obtain quaternary epilayers in the miscibility gap grown on GaSb with a good morphology even for lattice mismatched layers, in varying ΣPIII and DH2. The material quality has been assessed by single and double X-ray diffraction. The spectral responses of GaInAsSb(p)/GaSb(n) heterojunction are given. A spectral response obtained under illumination from the GaSb side, presents a good response at 2.75 μm.

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