Photoluminescence and Raman scattering spectra from porous silicon

https://doi.org/10.1016/0749-6036(92)90224-SGet rights and content

Abstract

Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depth-structural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with synchrotron radiation. It is concluded that the PL blue-shift correlates with the low-energy shift of the Raman peak and with the high-energy shift of the Si 2p absorption edge.

References (5)

  • M.S. Brandt et al.

    Solid State Commun.

    (1992)
  • H. Richter et al.

    Solid State Commun.

    (1981)
There are more references available in the full text version of this article.

Cited by (2)

  • Raman phonons of silicon wires

    1993, Physics Letters A
  • Raman study of free-standing porous silicon

    1996, Physical Review B - Condensed Matter and Materials Physics
View full text