Hydrogen sensitivity of Pd/SiO2/Si structure: A correlation with the hydrogen-induced modifications on optical and transport properties of α-phase Pd films

doi:10.1016/0250-6874(89)80004-6

Sensors and Actuators

Volume 16, Issues 1–2, 2 January 1989, Pages 43-54

https://doi.org/10.1016/0250-6874(89)80004-6 Get rights and content

Abstract

The effects of hydrogen absorption and desorption in Pd films are studied through reflectivity and conductance measurements. The data show that there is an appreciable variation in both signals even when the sample is exposed to a low hydrogen concentration that does not induce the αβ transition. The reflectivity variations are explained in terms of a rise of the Fermi level in the bulk of the Pd film, while the conductance decrease in a hydrogen atmosphere is related to the behaviour of scattering centres of the absorbed hydrogen atoms. Such ‘bulk’ effects are correlated to the flat-band voltage shift measured in Pd-gate MOS capacitors and two contributions to this quantity are isolated by a temporal analysis of the processes. A model based on two different sites for the absorbed hydrogen atoms is proposed to explain the results.

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Hydrogen sensitivity of Pd/SiO2/Si structure: A correlation with the hydrogen-induced modifications on optical and transport properties of α-phase Pd films

Abstract

Sensors and Actuators

Sensors and Actuators

Solid State Commun.

Solid State Commun.

J. Less-Common Met.

Sensors and Actuators

Band structure and superconductivity of PdDx and PdHx

Phys. Rev. B

Transition-metal hydrides: electronic structure and the heats of formation

Phys. Rev. B

Hydrogen sensitivity of Pd/SiO₂/Si structure: A correlation with the hydrogen-induced modifications on optical and transport properties of α-phase Pd films

Band structure and superconductivity of PdD_x and PdH_x