A high-power, low-contamination laser plasma source for Extreme UV lithography

doi:10.1016/0167-9317(94)00111-7

Microelectronic Engineering

Volume 27, Issues 1–4, February 1995, Pages 299-301

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Abstract

Experimental results are reported on the development of a low-contamination laser-plasma source for extreme ultra-violet lithography (EUVL). The results concern the intensity in the 12.5 to 15.5 nm wavelength range and the pollution of EUV optics by plasma debris.

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A high-power, low-contamination laser plasma source for Extreme UV lithography

Abstract

J. Vac. Sci. Technol. B

J. de Physique

J. Vac. Sci. Technol. B