Electrochemical deposition of PbSe thin films from aqueous solutions
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Cited by (58)
Mid-infrared photoresponse of electrodeposited PbSe thin films by laser processing and sensitization
2020, Optics and Lasers in EngineeringCitation Excerpt :Low-cost technique such as electrodeposition provides the advantages of room temperature deposition and accurate control of film thickness and composition due to being an electrically driven process. Several groups have reported electrodeposition of PbSe on Pt, Au, Ti, Ni, ITO, InP, and Si substrates [20–30]. Despite these electrodeposited PbSe films having good crystallinity, the deposited film is not dense and planar due to the formation of interconnected particle network, and homogeneous growth in the latter stages of deposition is inhibited owing to interaction with the acidic electrodeposition bath [26,29].
Solution-processed fabrication of perfectly (2 0 0)-oriented lead selenide thin films
2018, Materials LettersCitation Excerpt :Among the various chalcogenide semiconductors, lead selenide (PbSe) has demonstrated immense potential because of a narrow band gap of 0.26 eV at room temperature and superior electrical conductivity, which are suitable for the operation of optoelectronic devices in the infrared region [6]. PbSe thin films have been fabricated via several techniques, including vacuum deposition [7], electrodeposition [8], chemical bath deposition [9], and successive ionic layer adsorption [10]. The structural, optical, morphological, and electrical characteristics of the fabricated PbSe thin films depend on the preparation methods and the corresponding experimental parameters [11].
Fabrication of transition metal selenides and their applications in energy storage
2017, Coordination Chemistry ReviewsCitation Excerpt :The required materials are free of additives and binders used in the powder-based electrodes. Electrodeposition has been applied in synthesizing CdSe [129–133], CuSe [127], FeSe [134,135], MnSe [136], NiSe2 [105], MoSe [137], WSe2 [138,139], PbSe [140], and ZnSe [141–147], especially in CdSe and ZnSe. The deposited element and composition of final products could be controlled by the applied potential.
Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells
2016, Applied Surface ScienceCitation Excerpt :XRD and EDS results confirm that Se-rich cubic PbSe crystal film could be effectively deposited on FTO glass substrate by pulse voltage electrodeposition method. The amorphous form of selenium detected in the sample by EDS is typical for Se electrodeposited at ambient conditions, since elemental selenium is reported as intermediate for the formation of lead selenide [27]. Elemental selenium is firstly reduced from the solution:2Pb + SeO32− + 6H+ = 2Pb2+ + Se + 3H2O
Studies on structural, morphological and optical behavior of chemically deposited Cd<inf>0.5</inf>Pb<inf>0.5</inf>S thin films
2015, OptikCitation Excerpt :Nill et al. fabricated Pb0.98Cd0.02S for its application as diode lasers in ultrahigh resolution spectroscopy [9]. A variety of techniques have been employed to synthesize the thin films including successive ionic layer adsorption and reaction (SILAR) [10], electro deposition [11], spray pyrolysis [12], vacuum deposition [13], sputtering [14] and chemical bath deposition (CBD) [15–17]. Among these techniques, CBD has been used to deposit metal chalcogenide thin films since long back due to feasibility of routine deposition of nano-structured films and owing to strong advantage.
Determination and analysis of optical constants for thermally evaporated PbSe thin films
2011, VacuumCitation Excerpt :The electrical and optical properties of PbSe in bulk form have been investigated and analyzed by many authors [5,15–18]. Several authors have investigated these properties for PbSe films prepared by chemical techniques [19–23], whilst few authors prepared PbSe films by thermal evaporation technique [24]. Hankare et al. [21] prepared PbSe films by modified chemical bath deposition method and found that the absorption edge is around 1200 nm and the thermal activation energy is 0.158 eV.