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Thin Solid Films
Volume 198, Issues 1-2, 20 March 1991, Pages 43-51
 
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doi:10.1016/0040-6090(91)90323-P    How to Cite or Link Using DOI (Opens New Window)
Copyright © 1991 Published by Elsevier Science B.V. All rights reserved.

Electronics and optics

Conductivity and defects in amorphous silicon doping modulated multilayers

D. H. Zhang and D. Haneman

School of Physics, University of New South Wales, P.O. Box 1, Kensington, New South Wales 2033, Australia

Received 15 May 1990; 
revised 14 September 1990; 
accepted 2 October 1990. 
Available online 19 September 2002.

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Abstract

The variations in dark conductivity and photoconductivity with thickness of the intrinsic (i) layer in n-i-p-i… multilayers show opposite trends. These are explained in terms of dopant diffusion and phosphoruus-boron deep trap centers. Effects of light soaking and deposition at non-optimal substrate temperature or discharge power are detailed. In all cases they reduce the persistent photoconductivity which is maximized when film defects are held to a minimum.

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Thin Solid Films
Volume 198, Issues 1-2, 20 March 1991, Pages 43-51
 
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