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doi:10.1016/0040-6090(90)90106-N 
Copyright © 1990 Published by Elsevier Science B.V. All rights reserved.
Electronics and optics
Schottky contacts on rapidly thermally annealed GaAs
Received 18 May 1989;
revised 30 August 1989;
accepted 20 September 1989.
Available online 6 September 2002.
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Abstract
Unimplanted n-GaAs wafers have been rapidly thermally annealed with and without using proximity techniques for the same annealing conditions as that used for activating ion-implanted impurities. The Schottky contacts on GaAs wafers rapidly thermally annealed in the proximity of GaAs did not exhibit any significant degradation, whereas those on wafers annealed without the use of a proximity technique were found to be degraded. The Schottky contacts were electrically characterized by current vs. voltage and capacitance vs. voltage measurements and the surface morphologies were observed using a scanning electron microscope.
