Invited reviewTantalum thin film resistors
References (36)
Solid State Electronics
(1962)Electronics Reliability and Microminiaturisation
(1962)Electronics Reliability and Microminiaturisation
(1962)- et al.
Thin Solid Films
(1968) Anodic Oxide Films
- et al.
- W. D. Westwood. Thin Solid Films, to be...
- et al.
Am. J. Appl. Phys.
(1965) - et al.
Thin Film Technology
Thin Film Technology
Am. J. Appl. Phys.
Bell System Techn. J.
Cited by (12)
The effect of vacuum annealing on the microstructure, mechanical and electrical properties of tantalum films
2016, International Journal of Refractory Metals and Hard MaterialsCitation Excerpt :For example, due to low resistivity (15–70 μΩ-cm) and low hardness (~ 8–12 GPa), the α-phase Ta is suitable for use as a diffusion barrier in integrated circuits (ICs) to stop copper diffusion [8]. The β-phase Ta exhibits high resistivity (150–210 μΩ-cm) and high hardness (~ 18–20 GPa), thus suitable for being use in fabricating the resisters and capacitors [9]. Various groups grew Ta films either by electron beam evaporation [10,11] and/or sputtering [3,4,12,13] to study the effect of deposition parameters [11,13–15] and substrate material [13] on the phase formation in as-deposited Ta films.
Nucleation of fcc Ta when heating thin films
2015, Scripta MaterialiaGrowth and characterization of Ta/Ti bi-layer films on glass and Si (1 1 1) substrates by direct current magnetron sputtering
2012, Applied Surface ScienceCitation Excerpt :The high resistivity β-phase Ta is preferred as thin films resistors and the low resistivity α-phase is a good choice for a diffusion barrier between copper and silicon or interconnection in microelectronic devices [6,7]. Many of the methods for thin films deposition have been used to fabricate tantalum films, but sputtering is a most effective method for preparation of tantalum films because tantalum is a typical refractory metal [8–10]. Depending on the sputtering technique and conditions, the as-deposited tantalum films can be bcc α phase, tetragonal β phase or a mixture of α and β phase of tantalum [11,12].
Nanostructured alpha and beta tantalum formation-Relationship between plasma parameters and microstructure
2012, Materials Science and Engineering: ACitation Excerpt :However, films grown by this method can have two distinct crystal phases: a stable body centered cubic (BCC) alpha phase, and a tetragonal metastable beta phase. The alpha phase is commonly used for thin film semiconductor interconnects and most recently as a diffusion barrier in integrated circuits [10–13], while the tetragonal beta phase is used for heaters and resistors [8,9]. In general, magnetron sputtering deposition leads to metastable beta Ta formation [1,2,8,10–28], while the stable alpha phase is typically acquired by heating the substrate [19,29], by adding a bias [10,20,25,30,31] or by changing the substrate material [15,19,32–35].
An investigation of structural phase transformation and electrical resistivity in Ta films
2010, Applied Surface ScienceCitation Excerpt :For example, stable bcc α-phase Ta films which have low resistivity (15–70 μΩ cm) are commonly used in thin film capacitors. A metastable tetragonal β-phase which has high resistivity (140–210 μΩ cm) is used in thin film resistors [5] and heaters [1]. The coexistence of α and β phases in thin films limited their use in microelectronics industry.