Theory of reconstruction induced subsurface strain — application to Si(100)
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On the sensitivity of convergent beam low energy electron diffraction patterns to small atomic displacements
2019, Applied Surface ScienceCitation Excerpt :Thus, provided that optimal energy ranges are exploited, the RD = 0.15 criteria in Fig. 5 demonstrates that CBLEED can offer sensitivities of approximately ±0.06 Å and ±0.20 Å with regard to dimer height and length displacements, respectively. Again, using the symmetric-dimer Si(001)-2 × 1 structure [25] as the reference structure, RD[hk] was evaluated using Eq. (3) for model structures involving positive dimer height (Fig. 6(a)) and negative dimer length (Fig. 6(b)) displacements. Also included are WP CBLEED R-factors calculated from Eq. (4) and corresponding conventional LEED R-factors, where only normal incidence is incorporated.
Large-scale ab initio simulations based on systematically improvable atomic basis
2016, Computational Materials ScienceInfluence of sublayer atoms on Si(100) surface reconstructions
2006, Solid State CommunicationsAtomic-scale studies of hydrogenated semiconductor surfaces
2006, Progress in Surface ScienceSurface model of formation of silicon nitride on monocrystalline silicon
2002, Applied Surface Science
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