Elsevier

Surface Science

Volume 74, Issue 1, 2 May 1978, Pages 21-33
Surface Science

Theory of reconstruction induced subsurface strain — application to Si(100)

https://doi.org/10.1016/0039-6028(78)90268-6Get rights and content

Abstract

The stress produced by surface layer reconstruction on semiconductors can produce sizable elastic distortions of deeper layers. These are calculated using a standard bulk model of interatomic force constants for the pairing model of 2 × 1 reconstruction on the (100) surface of C, Si and Ge. Kinematic analysis for the predicted geometry with subsurface distortions is shown to give good agreement with LEED intensity data for Si. This reconciles the LEED results, for which the simple pairing model fails completely, with spectroscopic measurements, which are best fit by the pairing model.

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