A single-frequency approximation for interface-state density determination

doi:10.1016/0038-1101(80)90064-7

Solid-State Electronics

Volume 23, Issue 9, September 1980, Pages 987-993

https://doi.org/10.1016/0038-1101(80)90064-7 Get rights and content

Abstract

Fast interface state densities in the SiSi₂ system can be determined by measurements of the MIS capacitor admittance. Traditional detailed analysis require elaborate frequency dependent techniques. The more commonly used approximation techniques are difficult to interpret for interface state densities less than 1 × 10¹¹ eV⁻¹ cm⁻². We present here a new single frequency technique as an approximation method which provides quantitative criteria on the quality of such interfaces. The data required are a single high frequency capacitance vs voltage measurement and a corresponding conductance vs voltage measurement. The validity of this technique is best demonstrated in a three-dimensional plot of conductance, frequency and voltage. This also gives added insight into the relationship between the temporal and thermodynamic properties of interface electronic states. Comparison of results using this approximation to more detailed treatments demonstrates the validity of this new method for low surface state density determination in a range from 7 × 10⁹ eV⁻¹ cm⁻² to 8 × 10¹¹ eV⁻¹ cm⁻².

References (9)

L.M. Terman
Solid-St. Electron.
(1962)
L.M. Terman
Solid-St. Electron.
(1962)
J.L. Moll
Wescon Convention Record
(1959)
K. Lehovec et al.
Phys. Status Solidi
(1963)

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^†: Now at Rockwell International Science Center, Thousand Oaks, California, U.S.A.

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A single-frequency approximation for interface-state density determination

Abstract

Solid-St. Electron.

Solid-St. Electron.

Wescon Convention Record

Phys. Status Solidi