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Solid State Communications
Volume 99, Issue 9, September 1996, Pages 619-622
 
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doi:10.1016/0038-1098(96)00228-1    How to Cite or Link Using DOI (Opens New Window)
Copyright © 1996 Published by Elsevier Science Ltd.

Influence of ferroelectricity on the electrical properties of Cd1 − xZnxTe solid solutions

L. Benguiguib, a, R. Weilb, a, A. Chackb, a, E. Muranevich and R. Nkum*

a Solid State Institute, Technion — Israel Institute of Technology, 32000, Haifa, Israel b Physics Department, Technion — Israel Institute of Technology, 32000, Haifa, Israel

Received 5 August 1995; 
accepted 4 April 1996;
by S. Alexander 
Available online 8 February 1999.

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Abstract

Measurements of the electric conductivity and the Hall effect near the ferroelectric-paraelectric transition temperature of Cd1 − xZnxTe are presented. We observed anomalies in the temperature variation of the carrier density, as well as of the mobility. We relate this behavior to the ferroelectric properties. In particular we show that (∂E/∂T)p, where E is the position of the acceptor level, is proportional to the specific heat. We demonstrate the simultaneous appearance of a change in the acceptor energy level and a change in mobility of carriers at the phase transition of a ferroelectric semiconductor.

Author Keywords: A. ferroelectrics; A. semiconductors; D. phase transitions; D. electronic transport

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Solid State Communications
Volume 99, Issue 9, September 1996, Pages 619-622
 
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