New, more accurate methods for the investigation of the free carrier concentration and mobility by $\text{1}\text{ƒ}$ noise measurements

Abstract

The proposed new method can be applied for materials that obey the Hooge-Vandamme relation. The result for n, given by the method is independent of the actual mobility μ, and weakly depends on the noise factor α_H. Almost the same procedure can be applied for the investigation of μ. The problem of the temperature dependence investigations is also considered.