Laser-induced damage in InSb at 1.06 μm wavelength—a comparative study with Ge, Si and GaAs

doi:10.1016/0030-3992(95)00115-8

Optics & Laser Technology

Volume 28, Issue 5, July 1996, Pages 345-353

https://doi.org/10.1016/0030-3992(95)00115-8 Get rights and content

Abstract

This paper deals with the study of laser-induced damage in n-type single crystal InSb irradiated with a Nd: glass laser of 1.06 μm wavelength and 300 μs pulse duration. Samples of different surface quality were prepared by mechanical lapping and polishing by diamond paste. Evolution of damage morphological features observed at different power densities is discussed. Damage threshold results are analysed in terms of a thermal model taking into account the temperature dependence of various physical parameters and using the finite difference method of calculation. A comparative study of laser induced damage in InSb, Ge, Si and GaAs irradiated under similar conditions is also presented.

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In addition, temperature elevation would develop thermal stress in PV cells due to the mismatch in thermal expansion of the materials. The thermal stress would also influence the cell efficiency, as well as cause physical damage in cell and even lead to permanent failure of the cell [14–16]. Therefore, it is very important to comprehend the temperature characteristics of the cell under laser irradiation in order to improve the overall performance of laser-based wireless power transmission system.
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The damage morphologies of semiconductor under laser irradiation have been investigated a lot in the past few years. Nevertheless, most of the studies devoted to femtosecond laser [1–5], picosecond laser [6], and nanosecond laser [7–10]. Up to now, very few studies relate to the damage morphology of semiconductor induced by millisecond laser.
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^∗: AVK is on leave from the College of Applied Science for Women, University of Delhi, Delhi-110095, India.

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ArticleLaser-induced damage in InSb at 1.06 μm wavelength—a comparative study with Ge, Si and GaAs

Abstract

Opt Laser Technol

Infrared Physics

CO2 Laser induced damage to germanium: relation to surface preparation

Role of surface treatment in laser damage of germanium

J Appl Phys

Electron microscope observation of laser damage of germanium

Radiation Effects

Laser induced damage mechanisms in model optical materials

J Phys D: Appl Phys

Surface modelling during laser processing

Laser damage in silicon

Opt Laser Technol

Laser-induced damage to semiconductors

J Phys D: Appl Phys

Laser-induced recrystallization and damage in GaAs

Appl Phys Lett

Article
Laser-induced damage in InSb at 1.06 μm wavelength—a comparative study with Ge, Si and GaAs

CO₂ Laser induced damage to germanium: relation to surface preparation