Section 5. Ion-beam surface modificationEffects of ion implantation on intermediate range order: IR spectra of silica
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Effects of excess oxygen on the 4.5-6.3 eV absorption spectra of oxygen-rich high purity silica
2016, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsCitation Excerpt :The fictive temperature can be quite high and achieved very rapidly compared to silica heated by conventional means [10,11,15,21,22,32]. The importance of the fictive temperature is that changes in it can result in a variety of different formations of O excess related defects not readily observed in conventional type III silica as well as the compaction of the silica matrix in the implanted region [10,11,19,21,22,30]. With fast cooling rates associated with ion implantation, non-equilibrium states of silica can be frozen in the implanted layer of the silica substrate.
Optical properties of Ag nanocrystals in Sc and O sequentially implanted silica
2009, Journal of Non-Crystalline SolidsIon-induced frequency shift of ∼1100 cm<sup>-1</sup> IR vibration in implanted SiO<inf>2</inf>: Compaction versus bond-breaking
2003, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and AtomsEffects of MeV energy titanium ion implants on the oxygen related defects centers in silica
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