Saturation of band tail states in a-Si:H

doi:10.1016/0022-3093(83)90597-5

Journal of Non-Crystalline Solids

Volumes 59–60, Part 1, December 1983, Pages 369-372

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Abstract

The excitation intensity dependence of the intrinsic photoluminescence (PL) vs. temperature for sputtered and glow discharge hydrogenated amorphous silicon is reported. We find that a transition from linearity to sub-linearity in the excitation intensity dependence of the PL intensity is consistent the onset of photocarrier band tail saturation.

References (5)

W. Paul et al.
Solar Energy Mater.
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Adv. Phys.
(1981)

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Cited by (3)

Transient photoinduced absorption in optically biased a-Si:H
1984, Journal of Non-Crystalline Solids
The decay of photoinduced sub-bandgap absorption (PA) following pulsed excitation was studied as a function of cw bias illumination. Two temperature regimes were identified. At low temperature the dispersion parameter increases linearly with the steady state carrier population generated by the bias light. At high temperatures saturation of the change in the dispersion parameter is achieved. The low temperature result is explained by a bias controlled tunneling process while the high temperature results are explained by the multiple trapping process with the tail states under the saturation condition.
On the low-temperature efficiency of photoluminescence in a-Si: H and other materials
1991, Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
RECOMBINATION IN a-Si:H BASED MATERIALS: EVIDENCE FOR TWO SLOW RADIATIVE PROCESSES.
1987, Disord Semicond

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Section 9. Electronic Structure, Excitation and Recombination: Group IV ElementSaturation of band tail states in a-Si:H

Abstract

Solar Energy Mater.

Adv. Phys.

Section 9. Electronic Structure, Excitation and Recombination: Group IV Element
Saturation of band tail states in a-Si:H