Classical semiconductorCongruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface
References (39)
- et al.
J. Crystal Growth
(1990) - et al.
J. Phys. Chem. Solids
(1973) - et al.
J. Crystal Growth
(1990) J. Crystal Growth
(1991)- et al.
J. Crystal Growth
(1991) - et al.
J. Crystal Growth
(1989) - et al.
J. Crystal Growth
(1983) - et al.
Acta Met.
(1988) - et al.
J. Crystal Growth
(1981) - et al.
Surf. Sci.
(1993)
CALPHAD
(1990)
J. Chem. Phys.
(1971)
High Temp. High Pressure
(1994)
J. Chem. Phys.
(1957)
J. Vac. Sci. Technol. B
(1985)
Appl. Phys. Lett.
(1989)
Appl. Phys. A
(1984)
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