The characteristics of minority-carrier exclusion in narrow direct gap semiconductors
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2017, Solid-State ElectronicsCitation Excerpt :Various ways to reduce thermal generation have been proposed for HOT operating conditions. Significant improvements have been obtained by the reduction of the absorber volume using optical immersion [4], double or multiple pass of IR radiation [4], suppression of Auger thermal generation in non-equilibrium photoconductors [5,6], photodiodes [7–10], photon trapping detectors [11], plasmonic coupling of IR detectors [12], and barrier detectors [13–16]. Detectors based on the XBnn concept utilizing III-V compound semiconductor technology have translated into either higher temperature operation of the device for the same performance or higher performance for the same temperature [14].
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2000, Microelectronics JournalCitation Excerpt :The fundamental advantage of the Auger-suppressed non-equilibrium photodetectors (since they are photonic detectors) over the micromachined thermal devices is their large specific detectivity-bandwidth product [10], i.e. the high response speed has the crucial role in determining the applicability of a non-equilibrium device. In some references the response speed of Auger-suppressed exclusion and extraction has been estimated using approximate methods [11,12]. However, no attempt known to the authors has been made to simulate the transient response and of any of the existing non-equilibrium photodetectors and determine the achievable values.
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