Spectral hole burning on silicon phthalocyanines isolated in an argon matrix

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Abstract

Irradiation of the monomeric phthalocyanine Hex3SiO(SiPc)OSiHex3 isolated in an Ar matrix at T=13 K with the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located about 700 cm−1 above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise determination of several excited-state vibrational frequencies. For dimeric Hex3SiO(SiPc-O-SiPc)OSiHex3 in the same matrix the changes in the absorption spectra after irradiation into the Q band reveal an out-of-plane polarization of the bands which are not present in the monomer absorption. This points to substantial charge-resonance contributions to the excitonic coupling between the two SiPc units in dimeric Hex3SiO(SiPc-O-SiPc)OSiHex3.

References (24)

  • R.M. Macfarlane et al.

    J. Luminescence

    (1987)
  • B.M. Kharlamov et al.

    Chem. Phys. Letters

    (1977)
  • B. Dick

    Chem. Phys.

    (1989)
    B. Dick

    Chem. Phys.

    (1989)
  • S. Völker et al.

    Mol. Phys.

    (1976)
  • J. Hála et al.

    Czech. J. Phys.

    (1991)
  • M. Ehrl et al.

    J. Phys. Chem.

    (1994)
  • E. Ciliberto et al.

    J. Am. Chem. Soc.

    (1984)
  • S. Völker

    Ann. Rev. Phys. Chem.

    (1989)
  • W.E. Moerner

    Topics in current physics

    (1988)
  • J. Friedrich et al.

    J. Chem. Phys.

    (1983)
  • J. Friedrich et al.

    Angew. Chem.

    (1984)
  • A.A. Gorokhovski et al.

    JETP Letters

    (1974)

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