A well-behaved field effect transistor based on an intrinsic molecular semiconductor

doi:10.1016/0009-2614(88)80018-6

Chemical Physics Letters

Volume 145, Issue 4, 8 April 1988, Pages 343-346

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Abstract

The electrical characteristics of an insulated gate field effect transistor (FET) based on an intrinsic molecular semiconductor, bis(phthalocyaninato)lutetium (Pc₂Lu), are described. All the usual parameters of conventional devices are determined; the threshold voltage (−2 v), the transconductance (0.5X 10⁻⁹ Ω⁻¹) and the amplification factor (15) are compared with the values found for silicon-based devices.

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Chemical Physics Letters

A well-behaved field effect transistor based on an intrinsic molecular semiconductor

Abstract

J. Am. Chem. Soc.

Chem. Phys. Letters

Chem. Phys. Letters

Chem. Phys. Letters

Pure Appl. Chem.