Elsevier

Solid-State Electronics

Volume 28, Issues 1–2, January–February 1985, Pages 47-54
Solid-State Electronics

Measuring and modeling minority carrier transport in heavily doped silicon

https://doi.org/10.1016/0038-1101(85)90209-6Get rights and content

Abstract

From a fundamental transport formulation it is demonstrated that in heavily doped regions, only two independent parameters control the transport and recombination of minority carriers. The extraction of the minority carrier lifetime, diffusion coefficient, or bandgap narrowing is therefore impossible from DC measurements only. At least one additional AC measurement is necessary. The reported experimental data in the literature are critically revisited. When the published data are interpreted in terms of the original measurements a comprehensive picture appears, with surprising agreement among authors. Modeling of heavily doped regions in devices is shown to be possible, and good predictions of the emitter saturation current are demonstrated.

References (68)

  • P.L. Shah et al.
  • R.P. Mertens et al.

    Adv. in Electronics and Electron Physics

    (1981)
  • J.W. Slotboom et al.

    Solid St. Electron.

    (1976)
  • J. del Alamo et al.

    Solid-St. Electron.

    (1983)
  • P.E. Schmid et al.

    Solid-St. Comm.

    (1981)
  • A. Haug et al.

    Solid-St. Electron.

    (1982)
  • J.G. Fossum et al.

    Solid-St. Electron.

    (1983)
  • M.S. Tyagi et al.

    Solid-St. Electron.

    (1983)
  • J.D. Beck et al.

    Solid St. Comm.

    (1973)
  • C. Jacoboni et al.

    Solid-St. Electron.

    (1977)
  • H.S. Bennett

    Solid-St. Electron.

    (1983)
  • S. Swirhun et al.

    IEEE Electr. Dev. Lett.

    (1984)
  • R.A. Abram et al.

    Adv. in Physics

    (1978)
  • H.J.J. de Man

    IEEE Trans. Electr. Dev.

    (1971)
  • W.L. Kauffman et al.

    IEEE Trans. Electr. Dev.

    (1968)
  • F.A. Lindholm et al.
  • A.A. Vol'fson et al.

    Sov. Phys Semicond.

    (1967)
  • M. Balkanski et al.

    Phys. Stat. Sol.

    (1969)
  • F.A. Lindholm et al.

    IEEE Trans. Electr. Dev.

    (1977)
  • H.E. Wulms

    IEEE J. Solid-State Circuits

    (1977)
  • D.D. Tang

    IEEE Trans. Electr. Dev.

    (1980)
  • R.P. Mertens et al.

    IEEE Trans. Electr. Dev.

    (1980)
  • G.E. Possin et al.

    IEEE Trans. Electr. Dev.

    (1980)
  • A.W. Wieder

    IEEE Trans. Electr. Dev.

    (1980)
  • A. Neugroschel et al.

    IEEE Trans. Electr. Dev.

    (1982)
  • G.E. Possin et al.

    IEEE Trans. Electr. Dev.

    (1984)
  • A.H. Marshak et al.
  • J. del Alamo

    Appl. Phys. Lett.

    (1981)
  • J. del Alamo et al.

    IEEE Trans. Electr. Dev.

    (1984)
  • P.E. Schmid

    Phys Rev. B

    (1981)
  • J. Wagner

    Phys. Rev. B

    (1984)
  • W.P. Dumke

    Appl. Phys. Lett.

    (1983)
  • W.P Dumke

    J. Appl. Phys.

    (1983)
  • A. Selloni et al.

    Phys. Rev. Lett.

    (1982)
  • Cited by (0)

    View full text