Crystal growth aspects of the fabrication of high output thin film electroluminescent edge emitter^TM arrays

Abstract

Edge emitter TFEL samples were prepared by vacuum deposition. The composition of the source materials for the ZnS:Mn films was varied, and so was the substrate temperature during deposition. In particular, the source materials had an addition of Cl, and the substrate temperature was kept low during deposition. The edge emitter with the lowest attenuation was deposited from the highest Cl containing source material and at a substrate temperature that was initially high but was decreasing quickly during deposition. We believe that the likely reason for low attenuation is grain growth in the ZnS film which is not accompanied by the formation of intergranular cavities.