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Study of the Influence of Ga and In Doping on Organic Residuals in Solution-Processed IGZO Thin Films Deposited at Low-Temperature

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Abstract

In this work, the synthesis and characterization of IGZO films was carried out from the individual analysis of ZnO films doped at different In3+ and Ga3+ wt.%. The thin films were obtained by solution processes at low temperature (200 °C). The films were characterized by X-ray Diffraction, optical transmittance, FTIR spectroscopy and resistivity. It was found that the variation of doping affected the content of organic residuals in the deposited films. In addition, the fabrication and characterization of Metal–Insulator–Semiconductor capacitors on plastic substrates are presented. Interestingly, there was a correlation in the hysteresis with the doping of In3+ and Ga3+.

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Acknowledgements

This work was partially supported by Fondo Sectorial de Investigación para la Educación CONACyT-SEP Ciencia Basica [grant number A1-S-7888] and by VIEP-BUAP [grant number DJMA-EXC17-G]. S. Ceron and O. Obregon thank CONACyT for the scholarships awarded. M. Dominguez thanks Filmtronics Inc. PA, USA for the supplies provided.

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  1. Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla (BUAP), 72570, Puebla, Mexico

    Sonia Ceron, Ovier Obregon & Miguel A. Dominguez

  2. Centro de Investigación en Biotecnología Aplicada (CIBA), Instituto Politécnico Nacional, 72197, Tlaxcala, Mexico

    Abdu Orduña-Diaz

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  1. Sonia Ceron
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Ceron, S., Obregon, O., Orduña-Diaz, A. et al. Study of the Influence of Ga and In Doping on Organic Residuals in Solution-Processed IGZO Thin Films Deposited at Low-Temperature. Trans. Electr. Electron. Mater. 23, 489–498 (2022). https://doi.org/10.1007/s42341-021-00376-3

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