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High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical-oxidation

原位化学氧化构建高性能MoS2-MoO3面内同质异 质结光敏晶体管

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Abstract

Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors, which have great potential in the applications of next-generation integrated circuit and optoelectronic devices. Hence, a controlled and facile method to achieve p-n interface is desired. Molybdenum sulfide (MoS2) has shown promising potential as an atomic-layer n-type semiconductor in electronics and optoelectronics. Here, we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process. The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior, with a maximum external quantum efficiency of ∼650%, ∼3.6 mA W−1 at 0 V, and a light switching ratio of ∼102. The importance of the built in p-n junction with such a high performance is further confirmed by high resolution photo current mapping. Due to the high photoresponse at low source-drain voltage (VDS) and gate voltage (VG), the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits. Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics, optoelectronics and CMOS logic circuits.

摘要

由组成相同的材料构建具有清晰边界的平面内p-n异质结是 二维晶体管研究面临的主要挑战之一, 在下一代集成电路和光电 器件领域具有重要的潜在应用. 因此有必要开发一种可实现p-n界 面的简便、可控的操作方法. 硫化钼(MoS2)作为一种具有原子层 厚度的n型半导体材料已经在电子学和光电子学领域展现出巨大 的应用前景. 在本研究中, 我们通过KI/I2溶液化学氧化诱导方法实 现了从n型MoS2到p型MoO3的原位转化, 进而形成了横向面内p-n 异质结. MoS2/MoO3 p-n异质结显示出高效的光响应和整流特征, 0 V、~3.6mA W−1条件下最大外部量子产率达到~650%, 同时光开 关比达到~102. 构筑的p-n异质结的高性能也被光电流面扫描所证 实. 由于器件在低源漏电压(VDS)和栅压(VG)条件下具有高的光响 应性能, MoS2/MoO3 p-n二极管在光电器件及集成电路中的应用具 有低功耗的特点. 本研究为局部进行载流子种类转变提供了可能 的途径, 并将MoS2进一步应用于电子学、光电子学及CMOS逻辑 电路领域.

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Acknowledgements

We gratefully acknowledge the financial support from the National Natural Science Foundation of China (51722503, 51621004, 21705036 and 21975067), and the Natural Science Foundation of Hunan Province, China (2018JJ3035). The research has also received funding from the Fundamental Research Funds for the Central Universities from Hunan University.

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Authors and Affiliations

  1. College of Mechanical and Vehicle Engineering, State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, 410082, China

    Kaixi Bi  (毕开西), Zhiwen Shu  (舒志文), Huaizhi Liu  (刘怀志), Yiqin Chen  (陈艺勤) & Huigao Duan  (段辉高)

  2. School of Physics and Electronics, Hunan University, Changsha, 410082, China

    Qiang Wan  (万强), Jun Lin  (林均) & Huawei Liu  (刘华伟)

  3. Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China

    Gonglei Shao  (邵功磊), Yuanyuan Jin  (靳媛媛) & Song Liu  (刘松)

  4. College of Science, National University of Defense Technology, Changsha, 410073, China

    Mengjian Zhu  (朱梦剑)

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  1. Kaixi Bi  (毕开西)
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  2. Qiang Wan  (万强)
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  3. Zhiwen Shu  (舒志文)
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  4. Gonglei Shao  (邵功磊)
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  5. Yuanyuan Jin  (靳媛媛)
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  6. Mengjian Zhu  (朱梦剑)
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  7. Jun Lin  (林均)
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  8. Huawei Liu  (刘华伟)
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  9. Huaizhi Liu  (刘怀志)
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  11. Song Liu  (刘松)
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  12. Huigao Duan  (段辉高)
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Contributions

Duan H and Liu S conceived the ideas and designed the experiments; Bi K, Liu HW and Lin J engineered the samples; Wan Q, Shu Z and Shao G performed the XRD, XPS and Raman experiments. Bi K, Zhu M, Jin Y and Lin J fabricated and characterized the MoS2 device with assistance from Liu HW, Chen Y and Liu HZ. Bi K wrote the manuscript with input from all co-authors. All authors discussed the results and commented on the manuscript.

Corresponding authors

Correspondence to Song Liu  (刘松) or Huigao Duan  (段辉高).

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Conflict of interest

The authors declare no competing financial interest.

Supplementary information

The schematic of device fabrication process, PL spectral change with time, photoresponses with different irradiation powers and the characterization of the control photoswitching of CVD MoS2 are available in the online version of the paper.

Kaixi Bi received his PhD majored in physics from Hunan University in 2019. He is now a fulltime lecturer at the School of Instrument and Electronics, North University of China. His current research interests include nanomanufacturing, low-dimensional material field effect transistors, smart micro/nanosystems and their relevant applications.

Song Liu received his PhD in 2011 from Peking University. He was a postdoctoral fellow working in Prof. Liming Dai’s group (2011-2013) in Case Western Reserve University. After three years’ research in National University of Singapore (2013-2016), he is now a full professor at the Institute of Chemical Biology and Nanomedicine, Hunan University. His research interests focus on the controlled synthesis of low-dimensional materials, the application research of functional devices and nanobiological research.

Huigao Duan received his BSc and PhD in physics from Lanzhou University (China) in 2004 and 2010, respectively. He joined Hunan University as a full professor in 2012 and then set up a micro/nanofabrication laboratory there. His current research interests include sub-10-nm patterning, high-resolution color printing, nanomanufacturing, smart micro/nanosystems and their relevant applications.

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Bi, K., Wan, Q., Shu, Z. et al. High-performance lateral MoS2-MoO3 heterojunction phototransistor enabled by in-situ chemical-oxidation. Sci. China Mater. 63, 1076–1084 (2020). https://doi.org/10.1007/s40843-019-1259-6

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  • DOI: https://doi.org/10.1007/s40843-019-1259-6

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