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Effect of glycine on copper CMP

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Abstract

Chemical mechanical polishing (CMP) technology has been newly applied in printed circuit board (PCB) field for satisfying requirements from miniaturization of mobile devices. This paper focuses on the complexing agent to increase the removal rate for thick Cu layer. In order to find out optimum type and concentration of the complexing agent, experiments have been done in terms of electrochemical analysis, surface roughness and removal rate. As concentration of complexing agent (glycine) in slurry increased, it was confirmed that corrosion current density increased in potentio-dynamic curve since it promoted production of new Cu ion by decreasing amount of Cu ion of chemical reaction layer. Finally, it was possible to confirm that chemical reaction had a direct correlation with removal rate through CMP evaluation.

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Abbreviations

E corr :

Corrosion potential

i corr :

Corrosion current density

β a :

Anodic Tafel constant

β c :

Cathodic Tafel constant

R p :

Polarization resistance

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Authors and Affiliations

  1. School of Mechanical Engineering, Pusan National University, 2, Busandaehak-ro, 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea

    Soocheon Jang, Haedo Jeong, Minjong Yuh & Inho Park

  2. G&P Technology, #304 MEMSNANO Center, Pusan National University, 2, Busandaehak-ro, 63beon-gil, Geumjeong-gu, Busan, 46241, South Korea

    Soocheon Jang, Minjong Yuh & Inho Park

  3. Nitta Haas Inc., 3-17-1, Kannabidai, Kyotanabe-shi, Kyoto, 610-0333, Japan

    Jaehong Park

Authors
  1. Soocheon Jang
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  2. Haedo Jeong
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  3. Minjong Yuh
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  4. Inho Park
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  5. Jaehong Park
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Correspondence to Haedo Jeong.

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Jang, S., Jeong, H., Yuh, M. et al. Effect of glycine on copper CMP. Int. J. of Precis. Eng. and Manuf.-Green Tech. 3, 155–159 (2016). https://doi.org/10.1007/s40684-016-0019-1

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  • DOI: https://doi.org/10.1007/s40684-016-0019-1

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