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Multi-stacking Indium Zinc Oxide Thin-Film Transistors Post-annealed by Femtosecond Laser

  • Original Article – Nanomaterials
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Abstract

Indium zinc oxide thin-film transistors with a bottom gate structure were made by a channel layer multi-stack process on silicon substrate. Femtosecond laser post-annealing treatment was carried out to study the impact on the electrical properties and the stability of the device. The experimental results show that the electrical properties of the device are improved optimally when 100-s laser post-annealing treatment was carried out, and it had the best stability. The mobility was 5.23 cm2/Vs, the threshold voltage was − 0.26 V, the stable subthreshold swing was 0.81 V/dec, and the electron mobility of the device stayed above 3.82 cm2/Vs after it was exposed to air for 14 days.

Graphic Abstract

Figure a shows the transfer characteristic curve of the IZO TFTs obtained by measuring the drain current (Ids) a function of gate voltage (Vgs) swept from − 0 to 30 V, at a fixed drain voltage (Vds) of 30 V. Figure b shows the devices put in an atmospheric environment for 14 days and then detected their electrical properties.

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Acknowledgements

This research was supported by the MSIT (Ministry of Science and ICT), Korea, under the Grand Information Technology Research Center support program (IITP-2021-2020-0-01462) supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation), and by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (Grant No.2020R1I1A3A04037800). This research was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2020R1A6A1A1204794511).

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Authors and Affiliations

  1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, Korea

    Fei Shan, Jae-Yun Lee, Han-Lin Zhao, Seong Gon Choi & Sung-Jin Kim

  2. School of Electrical and Electronics Engineering, Chung-Ang University, 84 Heukseok-Ro, Dongiak-Gu, Seoul, 06974, Korea

    Jung-Hyuk Koh

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  1. Fei Shan
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Correspondence to Seong Gon Choi or Sung-Jin Kim.

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Shan, F., Lee, JY., Zhao, HL. et al. Multi-stacking Indium Zinc Oxide Thin-Film Transistors Post-annealed by Femtosecond Laser. Electron. Mater. Lett. 17, 451–458 (2021). https://doi.org/10.1007/s13391-021-00296-7

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  • DOI: https://doi.org/10.1007/s13391-021-00296-7

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